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TN2404K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TN2404K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO-92

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TN2404K Datasheet (PDF)

 ..1. Size:220K  vishay
bs107kl tn2404k.pdf

TN2404K
TN2404K

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low On-Resistance: 4 VGS(th)Part VDS RDS(on) ID Qg Secondary Breakdown Free: 260 VNumber (V) () (A) (Typ.)(A) Low Power/Voltage DrivenTN2404K 0.2 Low Input and Output Leakage240 4 at VGS = 10 V 0.8 to 2 4.87 nCTN2404K, Excellent Thermal Stability

 ..2. Size:89K  vishay
tn2404k tn2404kl bs107kl 2.pdf

TN2404K
TN2404K

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme

 ..3. Size:70K  vishay
tn2404k tn2404kl bs107kl.pdf

TN2404K
TN2404K

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme

 0.1. Size:220K  vishay
tn2404kl.pdf

TN2404K
TN2404K

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low On-Resistance: 4 VGS(th)Part VDS RDS(on) ID Qg Secondary Breakdown Free: 260 VNumber (V) () (A) (Typ.)(A) Low Power/Voltage DrivenTN2404K 0.2 Low Input and Output Leakage240 4 at VGS = 10 V 0.8 to 2 4.87 nCTN2404K, Excellent Thermal Stability

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CEP08N8

 

 
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History: CEP08N8

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