10N60G-TF3-T Todos los transistores

 

10N60G-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 10N60G-TF3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 166 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO-220F
 

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10N60G-TF3-T Datasheet (PDF)

 ..1. Size:425K  utc
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf pdf_icon

10N60G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 4.1. Size:425K  utc
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf pdf_icon

10N60G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 8.1. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdf pdf_icon

10N60G-TF3-T

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl

 8.2. Size:122K  chenmko
t10n60gp.pdf pdf_icon

10N60G-TF3-T

CHENMKO ENTERPRISE CO.,LTDT10N60GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=10A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=2MHz (Min.) .413 10.5( ).108( )

Otros transistores... SUM70060E , SUP10250E , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , 10N60G-TA3-T , 10N60L-TF3-T , 2SK3878 , 10N60L-TF1-T , 10N60G-TF1-T , 10N60L-TF2-T , 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T , 10N60L-T2Q-T , 10N60G-T2Q-T .

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