FDD6635 Datasheet. Equivalente

 ..1. Size:199K  fairchild semi
 fdd6635.pdf

 ..2. Size:308K  inchange semiconductor
 fdd6635.pdf

isc N-Channel MOSFET Transistor FDD6635 FEATURES Drain Current I =59A@ T =25 D C Drain Source Voltage V =35V(Min) DSS Static Drain-Source On-Resistance R =10m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.1. Size:68K  fairchild semi
 fdd6630a.pdf

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low g

 8.2. Size:345K  fairchild semi
 fdd6637 f085.pdf

December 2010 FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18m Applications Features Typ rDS(on) = 9.7m at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4m at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant 2010 Fairchild Sem

 8.3. Size:270K  fairchild semi
 fdd6632.pdf

October 2004 FDD6632 N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 70m General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.058 (Typ), VGS = 10V, ID = 9A low on-resistance. rDS(ON) = 0.090 (Typ), VGS = 4.5V, ID = 6A Optimized for switching

 8.4. Size:121K  fairchild semi
 fdd6637.pdf

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m @ VGS = 10 V Fairchild Semiconductor s proprietary PowerTrench RDS(ON) = 18 m @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capa

 8.5. Size:351K  onsemi
 fdd6630a.pdf

FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (5n

 8.6. Size:372K  onsemi
 fdd6637.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.7. Size:764K  cn vbsemi
 fdd6637.pdf

FDD6637 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.009 at VGS = - 10 V 80 RoHS* - 30 COMPLIANT 0.012 at VGS = - 4.5 V 80 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Ga

 8.8. Size:307K  inchange semiconductor
 fdd6632.pdf

isc N-Channel MOSFET Transistor FDD6632 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =90m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri