10N65KG-TF1-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 10N65KG-TF1-T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-220F

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10N65KG-TF1-T datasheet

 ..1. Size:215K  utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t.pdf pdf_icon

10N65KG-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFET using UTC s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

 ..2. Size:229K  utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf3-t 10n65kg-tf3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t 10n65kl-t2q-t 10n65kg-t2q-t.pdf pdf_icon

10N65KG-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

 4.1. Size:215K  utc
10n65kl-tf3-t 10n65kg-tf3-t 10n65kl-tm3-t 10n65kg-tm3-t 10n65kl-tn3-r 10n65kg-tn3-r.pdf pdf_icon

10N65KG-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFET using UTC s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

 8.1. Size:1300K  st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf pdf_icon

10N65KG-TF1-T

Otros transistores... 10N60G-T2Q-T, 10N60L-TQ2-T, 10N60G-TQ2-T, 10N60L-TQ2-R, 10N60G-TQ2-R, 10N65KL-TA3-T, 10N65KG-TA3-T, 10N65KL-TF1-T, 4435, 10N65KL-TF2-T, 10N65KG-TF2-T, 10N65KL-TF3-T, 10N65KG-TF3-T, 10N65KL-T2Q-T, 10N65KG-T2Q-T, 10N65KL-TM3-T, 10N65KG-TM3-T