FDD6637 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD6637
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 57 W
Tensión drenaje-fuente (Vds): 35 V
Tensión compuerta-fuente (Vgs): 25 V
Corriente continua de drenaje (Id): 55 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3 V
Carga de compuerta (Qg): 45 nC
Resistencia drenaje-fuente RDS(on): 0.0116 Ohm
Empaquetado / Estuche: TO252, DPAK
Búsqueda de reemplazo de MOSFET FDD6637
FDD6637 Datasheet (PDF)
1.1. fdd6637.pdf 
Size:121K _fairchild_semi
August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 18 mΩ @ VGS = –4.5 V technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capa
1.2. fdd6637 f085.pdf Size:345K _fairchild_semi
December 2010 FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Applications Features Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Sem
4.1. fdd6632.pdf Size:270K _fairchild_semi
October 2004 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 70mΩ General Description Features This device employs a new advanced trench MOSFET • Fast switching technology and features low gate charge while maintaining • rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A low on-resistance. • rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A Optimized for switching
4.2. fdd6635.pdf Size:199K _fairchild_semi
February 2007 tm FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 mΩ @ VGS = 4.5 V capability to offer superior performance benefit in the
4.3. fdd6630a.pdf Size:68K _fairchild_semi
April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low g
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