10N65KL-TF2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 10N65KL-TF2-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-220F
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10N65KL-TF2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the
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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3
Otros transistores... 10N60L-TQ2-T , 10N60G-TQ2-T , 10N60L-TQ2-R , 10N60G-TQ2-R , 10N65KL-TA3-T , 10N65KG-TA3-T , 10N65KL-TF1-T , 10N65KG-TF1-T , AON7410 , 10N65KG-TF2-T , 10N65KL-TF3-T , 10N65KG-TF3-T , 10N65KL-T2Q-T , 10N65KG-T2Q-T , 10N65KL-TM3-T , 10N65KG-TM3-T , 10N65KL-TN3-R .
History: 13N50G-TF3-T | 12P10L-TN3-R | 7N90 | 12P10G-TND-R | 2N70ZL | IRF3205ZLPBF | 5N65F
History: 13N50G-TF3-T | 12P10L-TN3-R | 7N90 | 12P10G-TND-R | 2N70ZL | IRF3205ZLPBF | 5N65F



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