12N10G-TA3-T Todos los transistores

 

12N10G-TA3-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 12N10G-TA3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET 12N10G-TA3-T

 

Principales características: 12N10G-TA3-T

 ..1. Size:234K  utc
 12n10l-ta3-t 12n10g-ta3-t 12n10l-tm3-t 12n10g-tm3-t 12n10l-tn3-r 12n10g-tn3-r 12n10g-s08-r.pdf pdf_icon

12N10G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on)

 7.1. Size:953K  belling
 blp12n10g-e.pdf pdf_icon

12N10G-TA3-T

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D

 7.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

12N10G-TA3-T

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D

 7.3. Size:984K  belling
 blp12n10g-q.pdf pdf_icon

12N10G-TA3-T

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D

MOSTRAR MÁS

Otros transistores... 11NM70G-TMS2-T , 11NM70L-TN3-R , 11NM70G-TN3-R , 11NM70L-T2Q-T , 11NM70G-T2Q-T , 11NM70L-T2S-T , 11NM70G-T2S-T , 12N10L-TA3-T , IRF1405 , 12N10L-TM3-T , 12N10G-TM3-T , 12N10L-TN3-R , 12N10G-TN3-R , 12N10G-S08-R , 12N60L-TA3-T , 12N60G-TA3-T , 12N60L-TF1-T .

 

 
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