FDD6N20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD6N20TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO252 DPAK

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FDD6N20TM Datasheet (PDF)

..1. Size:618K fairchild semi
fdd6n20tm.pdf

November 2013FDD6N20TMN-Channel UniFETTM MOSFET200 V, 4.5 A, 800 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching p

..2. Size:725K onsemi
fdd6n20tm.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:287K inchange semiconductor
fdd6n20tm.pdf

isc N-Channel MOSFET Transistor FDD6N20TMFEATURESDrain Current : I =4.5A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

6.1. Size:356K fairchild semi
fdd6n20tf.pdf

May 2007UniFETTMFDD6N20TMtmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has been espe

7.1. Size:376K fairchild semi
fdd6n20 fdu6n20.pdf

May 2007UniFETTMFDD6N20 / FDU6N20tmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has b

8.1. Size:713K fairchild semi
fdd6n25 fdu6n25.pdf

February 2007TMUniFETFDD6N25 / FDU6N25250V N-Channel MOSFETFeatures Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially ta

Otros transistores... FDD6680AS , STT03N10 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , FDD6796A , IRF640N , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ .

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