FDD6N50F Todos los transistores

 

FDD6N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD6N50F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 89 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 19.8 nC

Resistencia drenaje-fuente RDS(on): 1.15 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD6N50F Datasheet (PDF)

1.1. fdd6n50f fdu6n50f.pdf Size:648K _fairchild_semi

FDD6N50F
FDD6N50F

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar • Low gate charge ( Typ. 15nC) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF) This advance technology has

3.1. fdd6n50tm f085.pdf Size:941K _fairchild_semi

FDD6N50F
FDD6N50F

November 2010 FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tailored to

3.2. fdd6n50 fdu6n50.pdf Size:851K _fairchild_semi

FDD6N50F
FDD6N50F

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tai

 3.3. fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf Size:458K _fairchild_semi

FDD6N50F
FDD6N50F

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 9 p

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