FDD6N50F Todos los transistores

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDD6N50F FEATURES Drain Current I =5.5A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =1.15 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tai

FDD6N50TM-F085 500V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Features proprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC) minimize on-state resistance, provide s

FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Description Features RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF) provide bet

isc N-Channel MOSFET Transistor FDD6N50TM FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid