2SK2494-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2494-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO220AB

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2SK2494-01 Datasheet (PDF)

..1. Size:96K 1
2sk2494-01.pdf

N-channel MOS-FET2SK2494-01F-I Series 60V 0,025 45A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

8.1. Size:124K 1
2sk2499 2sk2499-z.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2499, 2SK2499-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2499 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high current switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-ResistanceRDS(on)1 = 9 m (VGS = 10 V, ID = 25 A)

8.2. Size:131K 1
2sk2498.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2498SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONS2SK2498 is N-Channel MOS Field Effect Transistor designed for(in millimeter)high current switching applications.10.00.3 4.50.2FEATURES3.20.22.70.2 Super Low On-State ResistanceRDS (on)1 9 m (VGS = 10 V, ID = 25 A)RDS (on)2

8.3. Size:383K toshiba
2sk2493.pdf

2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2493 Chopper Regulator and DC-DC Converter Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.08 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V = 0.5

8.4. Size:211K renesas
2sk2499-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.5. Size:33K panasonic
2sk2495.pdf

Power F-MOS FETs 2SK24952SK2495Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.26.0 0.5 1.0 0.1High-speed switchingNo secondary breakdown Applications1.5max. 1.1max.High-speed switching (switching mode regulator)For high-frequency power amplification0.8 0.1 0.5max.2.54 0.35.08 0.5 Absolute Maximu

8.6. Size:824K cn vbsemi
2sk2498.pdf

2SK2498www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 100 Material categorization:600.008 at VGS = 4.5 V 95TO-220 FULLPAKDGSDGSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Paramete

Otros transistores... 2SK2481 , 2SK2482 , 2SK2483 , 2SK2484 , 2SK2485 , 2SK2486 , 2SK2487 , 2SK2488 , IRFP064N , 2SK2498 , 2SK2499 , 2SK2510 , 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 .

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