17P10G-TA3-T Todos los transistores

 

17P10G-TA3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 17P10G-TA3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220
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17P10G-TA3-T Datasheet (PDF)

 ..1. Size:243K  utc
 17p10l-ta3-t 17p10g-ta3-t 17p10l-tf1-t 17p10g-tf1-t 17p10l-tf2-t 17p10g-tf2-t 17p10l-tf3-t 17p10g-tf3-t 17p10l-tm3-t 17p10g-tm3-t 17p10l-tn3-r 17p10g-tn3-r.pdf pdf_icon

17P10G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 17P10 Power MOSFET -17A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC convert

 9.1. Size:668K  fairchild semi
 fqp17p10.pdf pdf_icon

17P10G-TA3-T

TMQFETFQP17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 9.2. Size:666K  fairchild semi
 fqaf17p10.pdf pdf_icon

17P10G-TA3-T

TMQFETFQAF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12.4A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 9.3. Size:710K  fairchild semi
 fqb17p10tm.pdf pdf_icon

17P10G-TA3-T

TMQFETFQB17P10 / FQI17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tail

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 19N10L-TMS2-T | 15N65L-T47-T

 

 
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