17P10G-TN3-R Todos los transistores

 ..1. Size:243K  utc
 17p10l-ta3-t 17p10g-ta3-t 17p10l-tf1-t 17p10g-tf1-t 17p10l-tf2-t 17p10g-tf2-t 17p10l-tf3-t 17p10g-tf3-t 17p10l-tm3-t 17p10g-tm3-t 17p10l-tn3-r 17p10g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 17P10 Power MOSFET -17A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC convert

 9.1. Size:668K  fairchild semi
 fqp17p10.pdf

 9.2. Size:666K  fairchild semi
 fqaf17p10.pdf

 9.3. Size:710K  fairchild semi
 fqb17p10tm.pdf

TM QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tail

 9.4. Size:664K  fairchild semi
 fqpf17p10.pdf

 9.5. Size:675K  fairchild semi
 fqa17p10.pdf

TM QFET FQA17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -18A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to