19N10L-TN3-R Todos los transistores

 

19N10L-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 19N10L-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 15.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

19N10L-TN3-R Datasheet (PDF)

 ..1. Size:327K  utc
 19n10l-tms2-t 19n10g-tms2-t 19n10l-tms4-t 19n10g-tms4-t 19n10l-tn3-r 19n10g-tn3-r 19n10l-tq2-r 19n10g-tq2-r 19n10l-tq2-t 19n10g-tq2-t 19n10g-tms-t.pdf pdf_icon

19N10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,

 6.1. Size:327K  utc
 19n10l-t3p-t 19n10g-t3p-t 19n10l-ta3-t 19n10g-ta3-t 19n10l-tf3-t 19n10g-tf3-t 19n10l-tf1-t 19n10g-tf1-t 19n10l-tm3-t 19n10g-tm3-t 19n10l-tms-t.pdf pdf_icon

19N10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,

 8.1. Size:611K  fairchild semi
 fqb19n10ltm.pdf pdf_icon

19N10L-TN3-R

August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec

 8.2. Size:626K  fairchild semi
 fqp19n10l.pdf pdf_icon

19N10L-TN3-R

August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has

MOSTRAR MÁS

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History: 15NM70L-TA3-T

 

 
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