19N10G-TQ2-R Todos los transistores

 ..1. Size:327K  utc
 19n10l-tms2-t 19n10g-tms2-t 19n10l-tms4-t 19n10g-tms4-t 19n10l-tn3-r 19n10g-tn3-r 19n10l-tq2-r 19n10g-tq2-r 19n10l-tq2-t 19n10g-tq2-t 19n10g-tms-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance,

 6.1. Size:327K  utc
 19n10l-t3p-t 19n10g-t3p-t 19n10l-ta3-t 19n10g-ta3-t 19n10l-tf3-t 19n10g-tf3-t 19n10l-tf1-t 19n10g-tf1-t 19n10l-tm3-t 19n10g-tm3-t 19n10l-tms-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance,

 9.1. Size:611K  fairchild semi
 fqb19n10ltm.pdf

August 2000 TM QFET QFET QFET QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced tec

 9.2. Size:581K  fairchild semi
 fqpf19n10.pdf

August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been

 9.3. Size:626K  fairchild semi
 fqp19n10l.pdf

August 2000 TM QFET QFET QFET QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has

 9.4. Size:591K  fairchild semi
 fqp19n10.pdf

August 2000 TM QFET QFET QFET QFET FQP19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been es

 9.5. Size:688K  fairchild semi
 fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf

January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been

 9.6. Size:678K  fairchild semi
 fqd19n10tf fqd19n10tm fqd19n10 fqu19n10.pdf

January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especial

 9.7. Size:926K  fairchild semi
 fqb19n10tm.pdf

October 2008 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especially

 9.8. Size:616K  fairchild semi
 fqpf19n10l.pdf

August 2000 TM QFET QFET QFET QFET FQPF19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology h

 9.9. Size:246K  utc
 19n10.pdf

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance

 9.10. Size:882K  ncepower
 ncep019n10t.pdf

NCEP019N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =340A DS D switching performance. Both conduction and switching power R =2.0m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

 9.11. Size:636K  samwin
 swp19n10 swd19n10 swi19n10.pdf

SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS 100V TO-220 TO-252 TO-251 ID 19A High ruggedness Low RDS(ON) (Typ 0.1 )@VGS=10V RDS(ON) 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Synchronous Rectification, 3 3 3 Li Battery Protect Boa

 9.12. Size:501K  way-on
 wmq119n10lg2.pdf

WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET S G technology that has been especially tailored to minimize the on-state S S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching ap

 9.13. Size:790K  way-on
 wmp119n10lg2.pdf

WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description WMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS D R

 9.14. Size:519K  way-on
 wmb119n10lg2.pdf

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN50

 9.15. Size:506K  way-on
 wms119n10lg2.pdf

 9.16. Size:884K  cn vbsemi
 fqd19n10l.pdf

FQD19N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 9.17. Size:659K  cn scilicon
 sfg019n100c3.pdf