19N10L-TQ2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 19N10L-TQ2-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 15.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-263

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19N10L-TQ2-T Datasheet (PDF)

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19n10l-tms2-t 19n10g-tms2-t 19n10l-tms4-t 19n10g-tms4-t 19n10l-tn3-r 19n10g-tn3-r 19n10l-tq2-r 19n10g-tq2-r 19n10l-tq2-t 19n10g-tq2-t 19n10g-tms-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,

6.1. Size:327K utc
19n10l-t3p-t 19n10g-t3p-t 19n10l-ta3-t 19n10g-ta3-t 19n10l-tf3-t 19n10g-tf3-t 19n10l-tf1-t 19n10g-tf1-t 19n10l-tm3-t 19n10g-tm3-t 19n10l-tms-t.pdf

8.1. Size:611K fairchild semi
fqb19n10ltm.pdf

August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec

8.2. Size:626K fairchild semi
fqp19n10l.pdf

August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has

8.3. Size:688K fairchild semi
fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf

January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

8.4. Size:616K fairchild semi
fqpf19n10l.pdf

August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h

8.5. Size:501K way-on
wmq119n10lg2.pdf

WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching ap

8.6. Size:790K way-on
wmp119n10lg2.pdf

WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR

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wmb119n10lg2.pdf

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

8.8. Size:506K way-on
wms119n10lg2.pdf

WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures

8.9. Size:884K cn vbsemi
fqd19n10l.pdf

FQD19N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

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