FDD8444F085 Datasheet. Equivalente

 7.1. Size:311K  fairchild semi
 fdd8444 f085.pdf

October 2010 FDD8444_F085 N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

 7.2. Size:309K  fairchild semi
 fdd8444.pdf

June 2007 FDD8444 tm N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

 7.3. Size:388K  fairchild semi
 fdd8444l f085.pdf

January 2009 FDD8444L_F085 tm N-Channel PowerTrench MOSFET 40V, 50A, 6.0m Applications Features Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po

 7.4. Size:467K  onsemi
 fdd8444.pdf

March 2015 FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

 7.5. Size:816K  onsemi
 fdd8444l-f085.pdf

FDD8444L-F085 N-Channel PowerTrench MOSFET 40V, 50A, 6.0m Applications Features Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an

 7.6. Size:835K  cn vbsemi
 fdd8444-nl.pdf

FDD8444-NL www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM

 7.7. Size:287K  inchange semiconductor
 fdd8444.pdf

isc N-Channel MOSFET Transistor FDD8444 FEATURES Drain Current I =155A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid