1N65G-TM3-T Todos los transistores

 

1N65G-TM3-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1N65G-TM3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12.5 Ohm
   Paquete / Cubierta: TO-251
 

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1N65G-TM3-T PDF Specs

 ..1. Size:328K  utc
 1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf pdf_icon

1N65G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220 TO-220F avalanche characteristics. This power MOSFET is usually used i... See More ⇒

 7.1. Size:328K  utc
 1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf pdf_icon

1N65G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220 TO-220F avalanche characteristics. This power MOSFET is usually used i... See More ⇒

 9.1. Size:493K  chongqing pingwei
 11n65gs.pdf pdf_icon

1N65G-TM3-T

11N65GS 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE 11A,650V,R =0.40 @V =10V/5.5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability TO-252(DPAK) Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 11N65GS Drain-Source Voltage V 650 DSS V Gate-Source V... See More ⇒

Otros transistores... 1N60G-TND-R , 1N65L-AA3-R , 1N65G-AA3-R , 1N65L-TA3-T , 1N65G-TA3-T , 1N65L-TF3-T , 1N65G-TF3-T , 1N65L-TM3-T , IRFP064N , 1N65L-TMA-T , 1N65G-TMA-T , 1N65L-TN3-R , 1N65G-TN3-R , 1N65L-T60-K , 1N65G-T60-K , 1N65L-T92-B , 1N65G-T92-B .

 

 
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