1N65L-TMA-T Todos los transistores

 

1N65L-TMA-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1N65L-TMA-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 28 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 1.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 5 nC
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 20 pF
   Resistencia entre drenaje y fuente RDS(on): 12.5 Ohm
   Paquete / Cubierta: TO-251L

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1N65L-TMA-T Datasheet (PDF)

 ..1. Size:328K  utc
1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf

1N65L-TMA-T 1N65L-TMA-T

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 7.1. Size:328K  utc
1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf

1N65L-TMA-T 1N65L-TMA-T

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 9.1. Size:317K  ubiq
qm01n65l.pdf

1N65L-TMA-T 1N65L-TMA-T

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and

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History: 19N10G-TMS2-T

 

 
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History: 19N10G-TMS2-T

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