FDD8445 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8445
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 70
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087
Ohm
Paquete / Cubierta:
TO252
DPAK
Búsqueda de reemplazo de FDD8445 MOSFET
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Selección ⓘ de transistores por parámetros
FDD8445 datasheet
..1. Size:383K fairchild semi
fdd8445.pdf 
March 2007 tm FDD8445 N-Channel PowerTrench MOSFET 40V, 50A, 8.7m Features Applications RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 45nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectu
..2. Size:523K fairchild semi
fdd8445 f085.pdf 
January 2010 FDD8445_F085 N-Channel PowerTrench MOSFET 40V, 50A, 8.7m Features Applications RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 45nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Archite
..3. Size:287K inchange semiconductor
fdd8445.pdf 
isc N-Channel MOSFET Transistor FDD8445 FEATURES Drain Current I =70A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =8.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.1. Size:447K fairchild semi
fdd8447l f085.pdf 
February 2009 FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0m Applications Features Typ rDS(on) = 7.0m at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5m at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control Qualified to AEC Q101 Power Train Management RoHS Compliant Solenoid and Motor Drivers Electronic Transmission
8.2. Size:311K fairchild semi
fdd8444 f085.pdf 
October 2010 FDD8444_F085 N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch
8.3. Size:513K fairchild semi
fdd8447l.pdf 
May 2008 FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m Features General Description Max rDS(on) = 8.5m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11A deliver low rDS(on) and optimized BVDSS capability to offer Fast Switching
8.4. Size:309K fairchild semi
fdd8444.pdf 
June 2007 FDD8444 tm N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec
8.5. Size:388K fairchild semi
fdd8444l f085.pdf 
January 2009 FDD8444L_F085 tm N-Channel PowerTrench MOSFET 40V, 50A, 6.0m Applications Features Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po
8.6. Size:585K onsemi
fdd8447l f085.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.7. Size:637K onsemi
fdd8447l.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.8. Size:467K onsemi
fdd8444.pdf 
March 2015 FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2m Applications Features Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur
8.9. Size:816K onsemi
fdd8444l-f085.pdf 
FDD8444L-F085 N-Channel PowerTrench MOSFET 40V, 50A, 6.0m Applications Features Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an
8.10. Size:835K cn vbsemi
fdd8444-nl.pdf 
FDD8444-NL www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM
8.11. Size:287K inchange semiconductor
fdd8447l.pdf 
isc N-Channel MOSFET Transistor FDD8447L FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.12. Size:287K inchange semiconductor
fdd8444.pdf 
isc N-Channel MOSFET Transistor FDD8444 FEATURES Drain Current I =155A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... FDD7N25LZ
, FDD8424H
, STT02N20
, FDD8424HF085
, STT02N10
, FDD8444
, FDD8444F085
, FDD8444LF085
, 2SK3878
, FDD8445F085
, FDD8447L
, FDD8447LF085
, FDD8451
, FDD8453LZ
, FDD8453LZF085
, FDD850N10L
, STT02N07
.