1N65G-T60-K Todos los transistores

 

1N65G-T60-K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1N65G-T60-K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12.5 Ohm
   Paquete / Cubierta: TO-126
     - Selección de transistores por parámetros

 

1N65G-T60-K Datasheet (PDF)

 ..1. Size:328K  utc
 1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf pdf_icon

1N65G-T60-K

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 7.1. Size:328K  utc
 1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf pdf_icon

1N65G-T60-K

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 9.1. Size:493K  chongqing pingwei
 11n65gs.pdf pdf_icon

1N65G-T60-K

11N65GS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURE 11A,650V,R =0.40@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252(DPAK)Absolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65GSDrain-Source Voltage V 650DSSVGate-Source V

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP11N10AK | BSS84KR

 

 
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