1N65G-T92-K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1N65G-T92-K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 5 nC
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12.5 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET 1N65G-T92-K
1N65G-T92-K Datasheet (PDF)
1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i
1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i
11n65gs.pdf
11N65GS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURE 11A,650V,R =0.40@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252(DPAK)Absolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65GSDrain-Source Voltage V 650DSSVGate-Source V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918