FDD8447L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 2009FDD8447L_F085N-Channel PowerTrench MOSFET40V, 50A, 11.0m Applications Features Typ rDS(on) = 7.0m at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5m at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control Qualified to AEC Q101 Power Train Management RoHS Compliant Solenoid and Motor Drivers Electronic Transmission

May 2008FDD8447L40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mFeatures General Description Max rDS(on) = 8.5m at VGS = 10V, ID = 14AThis N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11Adeliver low rDS(on) and optimized BVDSS capability to offer Fast Switching

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDD8447LFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

March 2007tmFDD8445N-Channel PowerTrench MOSFET40V, 50A, 8.7m Features Applications RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 45nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectu

October 2010FDD8444_F085N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

January 2010FDD8445_F085N-Channel PowerTrench MOSFET40V, 50A, 8.7m Features Applications RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 45nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Archite

June 2007FDD8444tmN-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

January 2009FDD8444L_F085tmN-Channel PowerTrench MOSFET 40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po

March 2015FDD8444N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

FDD8444L-F085N-Channel PowerTrench MOSFET40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an

FDD8444-NLwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor FDD8445FEATURESDrain Current : I =70A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =8.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD8444FEATURESDrain Current : I =155A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =5.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid