24NM60L-TQ2-R Todos los transistores

 ..1. Size:458K  utc
 24nm60l-tq2-r 24nm60g-tq2-r 24nm60l-t3p-t 24nm60g-t3p-t 24nm60l-t3b-t 24nm60g-t3b-t 24nm60l-t3f-t 24nm60g-t3f-t 24nm60l-t47-t 24nm60g-t47-t 24nm60l-t47s-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

 2.1. Size:458K  utc
 24nm60l-ta3-t 24nm60g-ta3-t 24nm60l-tf1-t 24nm60g-tf1-t 24nm60l-tf2-t 24nm60g-tf2-t 24nm60l-tf3-t 24nm60g-tf3-t 24nm60l-tq2-t 24nm60g-tq2-t 24nm60g-t47s-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

 8.1. Size:878K  st
 stb24nm60n.pdf

STB24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET D PAK Features VDSS RDS(on) Order codes ID (@Tjmax) max. STB24NM60N 650 V

 8.2. Size:890K  st
 stf24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET TO-220FP, TO-220 and TO-247 Features VDSS RDS(on) Order codes ID (@Tjmax) max. STF24NM60N 650 V

 8.3. Size:1094K  st
 stf24nm60n sti24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, I PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order codes VDS @Tjmax RDS(on) max. ID STF24NM60N 3 3 2 2 1 1 STI24NM60N I2PAK TO-220FP 650 V 0.19 17 A STP24NM60N TAB STW24NM60N 100% avalanche tested 3 3 2 L

 8.4. Size:627K  st
 stl24nm60n.pdf

STL24NM60N N-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HV MDmesh II Power MOSFET Preliminary data Features VDSS @ RDS(on) Type ID S(3) Bottom view TJmax max S(3) S(3) G(1) STL24NM60N 650 V

 8.5. Size:731K  st
 stfi24nm60n.pdf

STFI24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in I PAKFP package Datasheet production data Features VDSS RDS(on) Order code ID (@Tjmax) max. STFI24NM60N 650 V

 8.6. Size:203K  inchange semiconductor
 stb24nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB24NM60N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.7. Size:216K  inchange semiconductor
 sti24nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STI24NM60N FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE