25N10G-TF1-T Todos los transistores

 

25N10G-TF1-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 25N10G-TF1-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-220F
 

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25N10G-TF1-T Datasheet (PDF)

 ..1. Size:225K  utc
 25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf pdf_icon

25N10G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

 8.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

25N10G-TF1-T

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 8.2. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

25N10G-TF1-T

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 8.3. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

25N10G-TF1-T

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

MOSTRAR MÁS

Otros transistores... 24NM60L-T3B-T , 24NM60G-T3B-T , 24NM60L-T3F-T , 24NM60G-T3F-T , 24NM60L-T47-T , 24NM60G-T47-T , 24NM60L-T47S-T , 25N10L-TF1-T , 5N60 , 25N10L-TF2-T , 25N10G-TF2-T , 25N10L-TF3-T , 25N10G-TF3-T , 25N10L-TM3-T , 25N10G-TM3-T , 25N10L-TN3-R , 25N10G-TN3-R .

History: IXFT9N80Q | AO4404B | CJP08N65 | CTLDM8120-M621H | 2SK2607 | STP5N95K3 | RJK1028DNS

 

 
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