25N10G-TF1-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 25N10G-TF1-T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-220F

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25N10G-TF1-T datasheet

 ..1. Size:225K  utc
 25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf pdf_icon

25N10G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

 8.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

25N10G-TF1-T

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S

 8.2. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

25N10G-TF1-T

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220

 8.3. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

25N10G-TF1-T

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design

MOSTRAR MÁS

Otros transistores... 24NM60L-T3B-T, 24NM60G-T3B-T, 24NM60L-T3F-T, 24NM60G-T3F-T, 24NM60L-T47-T, 24NM60G-T47-T, 24NM60L-T47S-T, 25N10L-TF1-T, IRLB4132, 25N10L-TF2-T, 25N10G-TF2-T, 25N10L-TF3-T, 25N10G-TF3-T, 25N10L-TM3-T, 25N10G-TM3-T, 25N10L-TN3-R, 25N10G-TN3-R