25N10G-TF2-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 25N10G-TF2-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO-220F
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25N10G-TF2-T PDF Specs
25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati... See More ⇒
ap25n10gh.pdf
AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S... See More ⇒
ap25n10gp-hf ap25n10gs-hf.pdf
AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220... See More ⇒
ap25n10gh-hf ap25n10gj-hf.pdf
AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design... See More ⇒
Otros transistores... 24NM60L-T3F-T , 24NM60G-T3F-T , 24NM60L-T47-T , 24NM60G-T47-T , 24NM60L-T47S-T , 25N10L-TF1-T , 25N10G-TF1-T , 25N10L-TF2-T , K3569 , 25N10L-TF3-T , 25N10G-TF3-T , 25N10L-TM3-T , 25N10G-TM3-T , 25N10L-TN3-R , 25N10G-TN3-R , 2N60L-T2Q-T , 2N60G-T2Q-T .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
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