2N60G-T2Q-T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N60G-T2Q-T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-262

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2N60G-T2Q-T datasheet

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 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60l-k08-5060-r.pdf pdf_icon

2N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 ..2. Size:291K  utc
 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60g-e-k08-5060-r 2n60g-tm3-t 2n60g-tnd-r.pdf pdf_icon

2N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

 0.1. Size:379K  utc
 12n60l-ta3-t 12n60g-ta3-t 12n60l-tf1-t 12n60g-tf1-t 12n60l-tf2-t 12n60g-tf2-t 12n60l-tf3-t 12n60g-tf3-t 12n60l-t2q-t 12n60g-t2q-t 12n60l-t3p-t 12n60g-t3p-t.pdf pdf_icon

2N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

 7.1. Size:289K  utc
 2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf pdf_icon

2N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

MOSTRAR MÁS

Otros transistores... 25N10G-TF2-T, 25N10L-TF3-T, 25N10G-TF3-T, 25N10L-TM3-T, 25N10G-TM3-T, 25N10L-TN3-R, 25N10G-TN3-R, 2N60L-T2Q-T, 5N65, 2N60L-T60-K, 2N60G-T60-K, 2N60L-T6C-K, 2N60G-T6C-K, 2N60G-E-K08-5060-R, 2N60G-TM3-T, 2N60G-TND-R, 2N60L-T60-T