FDD8453LZF085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8453LZF085  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 118 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: TO252 DPAK

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FDD8453LZF085 datasheet

 5.1. Size:411K  fairchild semi
 fdd8453lz f085.pdf pdf_icon

FDD8453LZF085

Aug 2012 FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typical Semiconductor s advanced PowerTrench process that RoHS Compliant has been especially tailored to mi

 5.2. Size:277K  fairchild semi
 fdd8453lz.pdf pdf_icon

FDD8453LZF085

September 2007 FDD8453LZ tm N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A been especially tailored to minimize the on-state resistance and HBM ESD pro

 5.3. Size:417K  onsemi
 fdd8453lz-f085.pdf pdf_icon

FDD8453LZF085

FDD8453LZ-F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description This N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A Semiconductor s advanced PowerTrench process that HBM ESD protection level > 7kv typical has been especially tailored to minimize the RoHS Compliant on-s

 5.4. Size:288K  inchange semiconductor
 fdd8453lz.pdf pdf_icon

FDD8453LZF085

isc N-Channel MOSFET Transistor FDD8453LZ FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =6.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

MOSTRAR MÁS

Otros transistores... FDD8444F085, FDD8444LF085, FDD8445, FDD8445F085, FDD8447L, FDD8447LF085, FDD8451, FDD8453LZ, BS170, FDD850N10L, STT02N07, FDD86102, STT01N20, FDD86102LZ, STT01L10, FDD86250, FDD86326