FDD8453LZF085 Todos los transistores

Aug 2012 FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typical Semiconductor s advanced PowerTrench process that RoHS Compliant has been especially tailored to mi... See More ⇒

September 2007 FDD8453LZ tm N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A been especially tailored to minimize the on-state resistance and HBM ESD pro... See More ⇒

FDD8453LZ-F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description This N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A Semiconductor s advanced PowerTrench process that HBM ESD protection level > 7kv typical has been especially tailored to minimize the RoHS Compliant on-s... See More ⇒

isc N-Channel MOSFET Transistor FDD8453LZ FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =6.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒