2N60L-TMS-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N60L-TMS-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 36 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm
Paquete / Cubierta: TO-251S
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2N60L-TMS-T Datasheet (PDF)
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Otros transistores... 2N60L-TF1-T , 2N60G-TF1-T , 2N60L-TF2-T , 2N60G-TF2-T , 2N60L-TF3T-T , 2N60G-TF3T-T , 2N60G-K08-5060-R , 2N60L-TM3-T , IRF530 , 2N60G-TMS-T , 2N60L-TMS2-T , 2N60G-TMS2-T , 2N60L-TMA-T , 2N60G-TMA-T , 2N60L-TMS4-T , 2N60G-TMS4-T , 2N60L-TN3-R .
History: IRHYK57133CMSE
History: IRHYK57133CMSE
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