2N65L-TA3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65L-TA3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-220
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2N65L-TA3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
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UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
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UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
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UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
Otros transistores... 2N60G-TMA-T , 2N60L-TMS4-T , 2N60G-TMS4-T , 2N60L-TN3-R , 2N60G-TN3-R , 2N60L-TND-R , 2N60L-K08-5060-R , 2N65G-AA3-R , MMIS60R580P , 2N65G-TA3-T , 2N65L-TF3-T , 2N65G-TF3-T , 2N65L-TF1-T , 2N65G-TF1-T , 2N65L-TF2-T , 2N65G-TF2-T , 2N65KL-TA3-T .
History: NP82N055NHE | TT8K11 | BSO200P03S
History: NP82N055NHE | TT8K11 | BSO200P03S



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