2N65G-TF2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65G-TF2-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-220F
- Selección de transistores por parámetros
2N65G-TF2-T Datasheet (PDF)
2n65l-aa3-r 2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tn3-r 2n65g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-ta3-t 2n65g-ta3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65g-t6c-k.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KUK7606-55A | 2SJ362 | PMN50UPE | 2N7089
History: KUK7606-55A | 2SJ362 | PMN50UPE | 2N7089



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
pa110bda | 2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet | 2n4249 datasheet | tip130