2N65KG-TF3-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N65KG-TF3-T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-220F

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2N65KG-TF3-T datasheet

 ..1. Size:243K  utc
 2n65kl-ta3-t 2n65kg-ta3-t 2n65kl-tf3-t 2n65kg-tf3-t 2n65kl-tf1-t 2n65kg-tf1-t 2n65kl-tf2-t 2n65kg-tf2-t 2n65kl-tf3t-t 2n65kg-tf3t-t 2n65kg-tnd-r.pdf pdf_icon

2N65KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 0.1. Size:298K  utc
 12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf pdf_icon

2N65KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.1. Size:298K  1
 12n65kl-t 12n65kg-t.pdf pdf_icon

2N65KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.2. Size:243K  utc
 2n65kl-tm3-t 2n65kg-tm3-t 2n65kl-tms-t 2n65kg-tms-t 2n65kl-tms2-t 2n65kg-tms2-t 2n65kl-tms4-t 2n65kg-tms4-t 2n65kl-tn3-r 2n65kg-tn3-r 2n65kl-tnd-r.pdf pdf_icon

2N65KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

MOSTRAR MÁS

Otros transistores... 2N65G-TF3-T, 2N65L-TF1-T, 2N65G-TF1-T, 2N65L-TF2-T, 2N65G-TF2-T, 2N65KL-TA3-T, 2N65KG-TA3-T, 2N65KL-TF3-T, MMIS60R580P, 2N65KL-TF1-T, 2N65KG-TF1-T, 2N65KL-TF2-T, 2N65KG-TF2-T, 2N65KL-TF3T-T, 2N65KG-TF3T-T, 2N65KG-TND-R, 2N65KL-TM3-T