2SK2499 Todos los transistores

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 2sk2499 2sk2499-z.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2499 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high current switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 FEATURES 1.3 0.2 10.0 Low On-Resistance RDS(on)1 = 9 m (VGS = 10 V, ID = 25 A)

 0.1. Size:211K  renesas
 2sk2499-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 2sk2498.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS 2SK2498 is N-Channel MOS Field Effect Transistor designed for (in millimeter) high current switching applications. 10.0 0.3 4.5 0.2 FEATURES 3.2 0.2 2.7 0.2 Super Low On-State Resistance RDS (on)1 9 m (VGS = 10 V, ID = 25 A) RDS (on)2

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 2sk2494-01.pdf

N-channel MOS-FET 2SK2494-01 F-I Series 60V 0,025 45A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 8.3. Size:383K  toshiba
 2sk2493.pdf

2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2493 Chopper Regulator and DC-DC Converter Applications Unit mm 2.5 V gate drive Low drain-source ON resistance R = 0.08 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode V = 0.5

 8.4. Size:33K  panasonic
 2sk2495.pdf

Power F-MOS FETs 2SK2495 2SK2495 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching (switching mode regulator) For high-frequency power amplification 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 Absolute Maximu

 8.5. Size:824K  cn vbsemi
 2sk2498.pdf

2SK2498 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 100 Material categorization 60 0.008 at VGS = 4.5 V 95 TO-220 FULLPAK D G S D G S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Paramete