2N65KL-TN3-R Todos los transistores

 

2N65KL-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N65KL-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-252

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2N65KL-TN3-R Datasheet (PDF)

 ..1. Size:243K  utc
2n65kl-tm3-t 2n65kg-tm3-t 2n65kl-tms-t 2n65kg-tms-t 2n65kl-tms2-t 2n65kg-tms2-t 2n65kl-tms4-t 2n65kg-tms4-t 2n65kl-tn3-r 2n65kg-tn3-r 2n65kl-tnd-r.pdf

2N65KL-TN3-R
2N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 6.1. Size:298K  1
12n65kl-t 12n65kg-t.pdf

2N65KL-TN3-R
2N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.2. Size:243K  utc
2n65kl-ta3-t 2n65kg-ta3-t 2n65kl-tf3-t 2n65kg-tf3-t 2n65kl-tf1-t 2n65kg-tf1-t 2n65kl-tf2-t 2n65kg-tf2-t 2n65kl-tf3t-t 2n65kg-tf3t-t 2n65kg-tnd-r.pdf

2N65KL-TN3-R
2N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 6.3. Size:298K  utc
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf

2N65KL-TN3-R
2N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.4. Size:218K  inchange semiconductor
12n65kl-tf1-t.pdf

2N65KL-TN3-R
2N65KL-TN3-R

isc N-Channel MOSFET Transistor 12N65KL-TF1-TFEATURESStatic Drain-Source On-Resistance: R

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