2N65G-TF3T-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65G-TF3T-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 24 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-220F
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2N65G-TF3T-T Datasheet (PDF)
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Otros transistores... 2N65KG-TMS4-T , 2N65KL-TN3-R , 2N65KG-TN3-R , 2N65KL-TND-R , 2N65L-AA3-R , 2N65L-TN3-R , 2N65G-TN3-R , 2N65L-TF3T-T , IRF3710 , 2N65L-TM3-T , 2N65G-TM3-T , 2N65G-T6C-K , 2N65L-TMS-T , 2N65G-TMS-T , 2N65L-TMS2-T , 2N65G-TMS2-T , 2N65L-TMS4-T .
History: R6015ENX | SVF4N65MJ | 2N65KG-TF1-T
History: R6015ENX | SVF4N65MJ | 2N65KG-TF1-T
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