2N65G-T6C-K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N65G-T6C-K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-126C

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2N65G-T6C-K Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

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UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli

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UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s

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