2N65L-TMS4-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65L-TMS4-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-251S4
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2N65L-TMS4-T Datasheet (PDF)
2n65l-tms4-t 2n65g-tms4-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tnd-r 2n65g-tnd-r 2n65g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t 2n65l-tms4-t 2n65g-tms4-t 2n65l-tnd-r 2n65g-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-tma-t 2n65g-tma-t 2n65l-tms-t 2n65g-tms-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tn3-t 2n65g-tn3-t 2n65l-t2q-t 2n65g-t2q-t 2n65l-t60-k 2n65g-t60-k 2n65l-t6c-k.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
Otros transistores... 2N65G-TF3T-T , 2N65L-TM3-T , 2N65G-TM3-T , 2N65G-T6C-K , 2N65L-TMS-T , 2N65G-TMS-T , 2N65L-TMS2-T , 2N65G-TMS2-T , 2SK3878 , 2N65G-TMS4-T , 2N65L-TND-R , 2N65G-TND-R , 2N65L-TMA-T , 2N65G-TMA-T , 2N65L-TN3-T , 2N65G-TN3-T , 2N65L-T2Q-T .
History: KHB9D0N90F1 | AONR20485 | BXL4004-1E | STU35L01A | FDB86135 | NCEAP40T15AGU | P1160JD
History: KHB9D0N90F1 | AONR20485 | BXL4004-1E | STU35L01A | FDB86135 | NCEAP40T15AGU | P1160JD



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