2N65G-K08-5060-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N65G-K08-5060-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 22 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 16 nC

Tiempo de elevación (tr): 2 nS

Conductancia de drenaje-sustrato (Cd): 19 pF

Resistencia drenaje-fuente RDS(on): 9.5 Ohm

Empaquetado / Estuche: DFN-8-5X6

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2N65G-K08-5060-R Datasheet (PDF)

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