2N7002G-AE2-R Todos los transistores

 

2N7002G-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002G-AE2-R

Código: 3PG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Conductancia de drenaje-sustrato (Cd): 11 pF

Resistencia drenaje-fuente RDS(on): 7.5 Ohm

Empaquetado / Estuche: SOT-23

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2N7002G-AE2-R Datasheet (PDF)

..1. 2n7002g-ae2-r.pdf Size:298K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Controll

7.1. 2n7002gp-a.pdf Size:69K _chenmko

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CHENMKO ENTERPRISE CO.,LTD2N7002GP-ASURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugge

7.2. 2n7002gp.pdf Size:337K _chenmko

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CHENMKO ENTERPRISE CO.,LTD2N7002GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged

 8.1. 2n7002lt1rev2.pdf Size:94K _motorola

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINN Channel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMU

8.2. 2n7002lt1.pdf Size:98K _motorola

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINN Channel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMU

 8.3. 2n7002pt.pdf Size:306K _philips

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2N7002PT60 V, 310 mA N-channel Trench MOSFETRev. 1 2 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

8.4. 2n7002p.pdf Size:311K _philips

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2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

 8.5. 2n7002ka.pdf Size:87K _philips

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2N7002KAN-channel TrenchMOS FETRev. 03 25 February 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge(ESD) protection diodes1

8.6. 2n7002-03.pdf Size:276K _philips

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2N7002N-channel enhancement mode field-effect transistorRev. 03 27 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7002 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3.

8.7. 2n7002bkt.pdf Size:334K _philips

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2N7002BKT60 V, 290 mA N-channel Trench MOSFETRev. 1 15 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

8.8. 2n7002e.pdf Size:92K _philips

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2N7002EN-channel TrenchMOS FETRev. 03 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-s

8.9. 2n7002pw.pdf Size:148K _philips

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2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

8.10. 2n7002.pdf Size:87K _philips

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2N7002N-channel TrenchMOS FETRev. 06 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-sp

8.11. 2n7002ps.pdf Size:354K _philips

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2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

8.12. 2n7002ck.pdf Size:76K _philips

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2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

8.13. 2n7000 2n7002.pdf Size:626K _st

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2N70002N7002N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID32N7000 60 V

8.14. t2n7002bk.pdf Size:236K _toshiba

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T2N7002BKMOSFETs Silicon N-Channel MOST2N7002BKT2N7002BKT2N7002BKT2N7002BK1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

8.15. t2n7002ak.pdf Size:590K _toshiba

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T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

8.16. 2n7002v-va.pdf Size:506K _fairchild_semi

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April 20102N7002V/VAN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant(Pin4)SOT-563FMarking : AB Marking : AC* Pin1 and Pin4 are ex

8.17. 2n7002t.pdf Size:332K _fairchild_semi

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October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking : AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P

8.18. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

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November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

8.19. 2n7002w.pdf Size:291K _fairchild_semi

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February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking : 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par

8.20. 2n7002kw.pdf Size:286K _fairchild_semi

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May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb

8.21. 2n7002mtf.pdf Size:115K _fairchild_semi

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N-Channel Small Signal MOSFET 2N7002MTFFEATURESBVDSS = 60 V Lower RDS(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 200 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature ReliabilityProduct Summary1.Gate 2. Source 3. DrainPart Number BVDSS RDS(on) ID2N7002 60V 5.0 115mAAbsolute Maximum Ratings

8.22. 2n7002dw.pdf Size:257K _fairchild_semi

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October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking : 2NAbsolute Maximum Ratings * Ta = 25C un

8.23. 2n7002k.pdf Size:222K _fairchild_semi

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January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23

8.24. 2n7002bkw.pdf Size:719K _nxp

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2N7002BKW60 V, 310 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

8.25. 2n7002nxbk.pdf Size:284K _nxp

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2N7002NXBK60 V, N-channel Trench MOSFET25 July 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

8.26. 2n7002bkv.pdf Size:921K _nxp

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2N7002BKV60 V, 340 mA dual N-channel Trench MOSFETRev. 2 22 September 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trenc

8.27. 2n7002bk.pdf Size:732K _nxp

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2N7002BK60 V, 350 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tech

8.28. 2n7002p.pdf Size:432K _nxp

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.29. 2n7002nxak.pdf Size:274K _nxp

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2N7002NXAK60 V, single N-channel Trench MOSFET1 July 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected3. Applications Relay

8.30. 2n7002pw.pdf Size:266K _nxp

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.31. 2n7002.pdf Size:153K _nxp

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2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 8 September 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.1.2 Features and benefits Suitable for logic level gate drive Surface-mounted packagesources Trench MOSFET technology Very f

8.32. 2n7002ps.pdf Size:475K _nxp

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.33. 2n7002bks.pdf Size:477K _nxp

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.34. 2n7002pv.pdf Size:277K _nxp

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.35. 2n7002bkmb.pdf Size:661K _nxp

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2N7002BKMB60 V, single N-channel Trench MOSFETRev. 2 13 June 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Logic-level compa

8.36. 2n7002ck.pdf Size:585K _nxp

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2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

8.37. 2n7002.pdf Size:439K _samsung

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N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Lower Rds(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 115 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature Reliability2131.Gate 2. Drain 3. SourceProduct SummaryPart Number BVdss Rds(on) ID115mA60V2N7002 5.0 Absolute Maximum RatingsSy

8.38. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

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2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

8.39. 2n7002e.pdf Size:182K _vishay

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2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

8.40. 2n7002k.pdf Size:210K _vishay

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2N7002KVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET

8.41. 2n7000 2n7002 vq1000j vq1000p bs170.pdf Size:58K _vishay

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2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

8.42. 2n7002e 1.pdf Size:174K _vishay

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2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

8.43. 2n7002t.pdf Size:77K _diodes

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2N7002TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Sol

8.44. 2n7002w.pdf Size:120K _diodes

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2N7002WN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Le

8.45. 2n7002aq.pdf Size:235K _diodes

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2N7002AQN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage 60V 6 @ VGS = 5V 200mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate, 1.2kV HBM This MOSFET is designed to minimize the on-s

8.46. 2n7002vc 2n7002vac.pdf Size:138K _diodes

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2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connection

8.47. 2n7002-7-f 2n7002-7.pdf Size:127K _diodes

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2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 60V 7.5 @ VGS = 5V 210mA Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

8.48. 2n7002dw.pdf Size:84K _diodes

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2N7002DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termina

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2N7002AN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Ca

8.50. 2n7002e.pdf Size:78K _diodes

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2N7002EN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadfra

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002VC/VACDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance T

8.52. 2n7002k.pdf Size:161K _diodes

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin an

8.53. 2n7002.pdf Size:86K _diodes

2N7002G-AE2-R
2N7002G-AE2-R

2N7002N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte

8.54. 2n7002h.pdf Size:438K _diodes

2N7002G-AE2-R
2N7002G-AE2-R

2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits N-Channel MOSFET ID max V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Low Gate Threshold Voltage 60V 7.5 @ VGS = 5V 210mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

8.55. 2n7002dw.pdf Size:443K _infineon

2N7002G-AE2-R
2N7002G-AE2-R

2N7002DWOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 60 V Dual N-channelRDS(on),max VGS=10 V 3 W Enhancement mode Logic level VGS=4.5 V 4 Avalanche ratedID 0.3 A Fast switching Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-211 2 3 Type

8.56. 2n7002w-tp.pdf Size:179K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

8.57. 2n7002t.pdf Size:766K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

Features Maximum Ratings

8.58. 2n7002w.pdf Size:182K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

8.59. 2n7002ka.pdf Size:892K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KAFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch ESD Protected up to 2KV (HBM) Epoxy Meets UL 94 V-0 Flammability RatingN-Channel Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering

8.60. 2n7002dw.pdf Size:909K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

MCCMicro Commercial ComponentsTM2N7002DW20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesHalogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1N-Channel MOSFET High density cell design for low RDS(ON) Rugged and r

8.61. 2n7002a.pdf Size:1053K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

2N7002AFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-Channel Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information) Maximum Ratings Operating Junct

8.62. 2n7002k-tp.pdf Size:400K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2N7002KCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 High density cell design for low RDS(ON) Voltage controlled small signal switch N-Channel MOSFET Rugged and reliable Hig

8.63. 2n7002.pdf Size:257K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2N7002CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Advanced Trench Process Technology High Input ImpedanceN-Channel MOSFET High Speed Switching CMOS Logic Compatible Input

8.64. 2n7002kdw.pdf Size:382K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

Features

8.65. 2n7002kwa.pdf Size:854K _mcc

2N7002G-AE2-R
2N7002G-AE2-R

Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junct

8.66. 2n7002l 2v7002l.pdf Size:100K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable (2V7002L)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant7.5 W @ 10 V,60 V 115 mA500 mA

8.67. 2n7002k 2v7002k.pdf Size:107K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

8.68. 2n7002t.pdf Size:426K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.69. 2n7000 2n7002 nds7002a.pdf Size:736K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorDescriptionFeaturesThese N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON)tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switchproprietary, high cell density, DMOS technology. These Rugged and Reliableproducts have been de

8.70. 2v7002k 2n7002k.pdf Size:64K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

8.71. 2n7002e 2.pdf Size:95K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)http://onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift C

8.72. 2n7002w 2v7002w.pdf Size:65K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

8.73. 2n7002kw.pdf Size:120K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KWN-Channel EnhancementMode Field EffectTransistorFeatureswww.onsemi.com Low On-Resistance Low Gate Threshold VoltageD Low Input Capacitance Fast Switching SpeedS Low Input/Output Leakage G Ultra-Small Surface Mount PackageSC-703 LEAD These Devices are Pb-Free and are RoHS CompliantCASE 419AB ESD HBM = 1000 V as per JESD22 A114 a

8.74. 2v7002w 2n7002w.pdf Size:61K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

8.75. 2n7002l.pdf Size:92K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features AEC Qualifiedhttp://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.5 W @ 10 V,60 V 115 mA500 mAMAXIMUM RATINGSRating Symbol Value UnitN-ChannelDrain-Source Voltage VDSS 60 Vdc3Drain-Gate Voltage (RGS = 1.0 MW) V

8.76. 2n7002dw.pdf Size:435K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.77. 2n7002e.pdf Size:65K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift Circ

8.78. 2n7002kt1g.pdf Size:102K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)http://onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V Thes

8.79. 2v7002l 2n7002l.pdf Size:90K _onsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Site andhttp://onsemi.comChange Controls AEC Qualified - 2V7002LV(BR)DSS RDS(on) MAX ID MAX PPAP Capable - 2V7002L These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 W @ 10 V,60 V 115 mACompliant 500 mAN-Channel

8.80. 2n7002t.pdf Size:173K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Contr

8.81. 2n7002zt.pdf Size:159K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

8.82. 2n7002w.pdf Size:153K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Volta

8.83. 2n7002zdw.pdf Size:171K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CR

8.84. 2n7002zdwg-al6-r.pdf Size:172K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance

8.85. 2n7002ll.pdf Size:160K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1voltages. This device is suitable for use as a load switch or in 2PWM applications. FEATURES SOT-23-3(JEDEC TO-236)* RDS(ON) = 7.5

8.86. 2n7002z.pdf Size:178K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

8.87. 2n7002dw.pdf Size:285K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Co

8.88. 2n7002k.pdf Size:159K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

8.89. 2n7002kl-ae2-r 2n7002kg-ae2-r.pdf Size:423K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typica

8.90. 2n7002.pdf Size:286K _utc

2N7002G-AE2-R
2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Controlled S

8.91. 2n7002ku.pdf Size:241K _auk

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KUN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

8.92. 2n7002k.pdf Size:237K _auk

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

8.93. 2n7002b.pdf Size:237K _auk

2N7002G-AE2-R
2N7002G-AE2-R

2N7002BN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: RDS(on)

8.94. 2n7002ks6.pdf Size:435K _rectron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25

8.95. 2n7002c1c 2n7002c1d.pdf Size:329K _semelab

2N7002G-AE2-R
2N7002G-AE2-R

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn

8.96. 2n7002csm.pdf Size:174K _semelab

2N7002G-AE2-R
2N7002G-AE2-R

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage

8.97. 2n7002c1a 2n7002c1b.pdf Size:289K _semelab

2N7002G-AE2-R
2N7002G-AE2-R

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 6

8.98. 2n7002dcsm.pdf Size:16K _semelab

2N7002G-AE2-R
2N7002G-AE2-R

2N7002DCSMMECHANICAL DATADimensions in mm (inches)DUAL NCHANNELENHANCEMENT MODEMOS TRANSISTOR1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 314 V(BR)DSS = 60VA0.236 5rad.(0.009) RDS(ON) = 7.56.22 0.13 A = 1.27 0.13(0.05 0.005)(0.245 0.005) ID = 0.115ACERAMICLCC2 PA

8.99. s2n7002kw.pdf Size:536K _secos

2N7002G-AE2-R
2N7002G-AE2-R

S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.

8.100. s2n7002dw.pdf Size:247K _secos

2N7002G-AE2-R
2N7002G-AE2-R

S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363MECHANICAL DATA Case: SOT-363Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INF

8.101. 2n7002t.pdf Size:283K _secos

2N7002G-AE2-R
2N7002G-AE2-R

2N7002T 0.115A , 60V , RDS(ON) 7.2 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). A Voltage controlled small signal switch. M Rugged and reliable. 33 High saturation current capability. Top View C B11 2

8.102. s2n7002w.pdf Size:87K _secos

2N7002G-AE2-R
2N7002G-AE2-R

S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package AL33Top

8.103. 2n7002kw.pdf Size:527K _secos

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 A Advanced Trench Process Technology L High Density Cell Design For Ultra Low On-Resistance

8.104. s2n7002.pdf Size:82K _secos

2N7002G-AE2-R
2N7002G-AE2-R

S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product SOT-23 A suffix of -C specifies halogen & lead-free ALFEATURES 33 Pb-Free Package is Available Top View C BPACKAGING INFORMATION 11 22K EDrain Drain 3 3 D H JF G702 W 1 Millimeter Millimeter REF. REF. Min. Max. Min.

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2N7002G-AE2-R
2N7002G-AE2-R

S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of -C specifies halogen & lead-free AL33Top View C BFEATURES 11 23 DRAIN2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1H JF GGATE* Easily designed drive circuits. Easy to parallel.

8.106. 2n7002k.pdf Size:527K _secos

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 AL Advanced Trench Process Technology 33 High Density Cell Design For Ultra Low On-Resista

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363FEATURES A Low on-resistance EL Fast switching Speed 6 5 4 Low-voltage drive Easily designed drive circuits B ESD protected:2000V 1 2 3FC H6 5 4MECHANICAL DATA JD2 G1 S1 D

8.108. tsm2n7002e a07.pdf Size:143K _taiwansemi

2N7002G-AE2-R
2N7002G-AE2-R

8.109. tsm2n7002kdcu6.pdf Size:194K _taiwansemi

2N7002G-AE2-R
2N7002G-AE2-R

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

8.110. tsm2n7002kcx.pdf Size:380K _taiwansemi

2N7002G-AE2-R
2N7002G-AE2-R

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

8.111. tsm2n7002 a07.pdf Size:127K _taiwansemi

2N7002G-AE2-R
2N7002G-AE2-R

8.112. tsm2n7002kcu tsm2n7002kcx.pdf Size:237K _taiwansemi

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2N7002G-AE2-R

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

8.113. 2n7002x.pdf Size:311K _jiangsu

2N7002G-AE2-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING:K72 MAXIMUM RATINGS (Ta=25

8.114. 2n7002t.pdf Size:2511K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-523 5@10V60V115mA 1. GATE 7@5V2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch

8.115. 2n7002v.pdf Size:1871K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel)ID V(BR)DSS RDS(on)MAX SOT-563 62.5@10V560V4115mA3@5V123FEATURE APPLICATION Dual N-channel MOSFET Load Switch for Portable Devices DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance

8.116. 2n7002w.pdf Size:1902K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-323 5@10V360V 115mA7@5V1. GATE 2. SOURCE 3. DRAIN 12APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small sig

8.117. 2n7002kw.pdf Size:1922K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS2N7002KW N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE2. SOURCE123. DRAINFEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm

8.118. 2n7002dw.pdf Size:1426K _jiangsu

2N7002G-AE2-R
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs2N7002DW Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V60V115mA@5V7APPLICATION FEATURE High density cell design for low RDS(ON) Load Switch for Portable Devices DC/DC Converter Voltage controlled small signal switch Rugged and reliable High

8.119. 2n7002k.pdf Size:5156K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS onz Voltage controlled small signal switch 1. GATE 2. SOURCE z Rugged and reliable 3. DRAINz High saturation current capability zESD protected up to 2KV Marking: 72K Equivalent circuit MOSFET

8.120. 2n7002.pdf Size:1538K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5@10V360V115mA 7@5V1. GATE 2. SOURCE 1 23. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal sw

8.121. 2n7002kdw.pdf Size:1310K _jiangsu

2N7002G-AE2-R
2N7002G-AE2-R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V 660V5340mA45.3@4.5V123FEATURE APPLICATION z High density cell design for Low RDS on Load Switch for Portable Devicesz Voltage controlled small signal switch DC/DC Converter z Rugged

8.122. 2n7002ka.pdf Size:552K _kec

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KASEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERS_+High density cell design for low RDS(ON). A 2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23 D 0.40+0.15/-0.05Rugged and reliable.E 2.40+0.30/-0.201G 1.90

8.123. 2n7002a.pdf Size:51K _kec

2N7002G-AE2-R
2N7002G-AE2-R

2N7002ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LHigh density cell design for low RDS(ON).DIM MILLIMETERSVoltage controolled small signal switch._A +2.93 0.20B 1.30+0.20/-0.15Rugged and reliable.C 1.30 MAX23High saturation current capablity.D 0.45+0.15/-0.05E 2.40+0.3

8.124. 2n7002k.pdf Size:68K _kec

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERSHigh density cell design for low RDS(ON)._A +2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23Rugged and reliable.D 0.45+0.15/-0.05E 2.40+0.30/-0.20High saturation curr

8.125. 2n7002.pdf Size:65K _kec

2N7002G-AE2-R
2N7002G-AE2-R

2N7002SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LHigh density cell design for low RDS(ON).DIM MILLIMETERSVoltage controlled small signal switch._+A 2.93 0.20B 1.30+0.20/-0.15Rugged and reliable.C 1.30 MAX23High saturation current capablity.D 0.45+0.15/-0.05E 2.40+0.30/

8.126. 2n7002.pdf Size:1878K _htsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N700260V N-Channel Enhancement Mode MOSFET Feature SOT-23 60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Conver

8.127. 2n7002w.pdf Size:241K _lge

2N7002G-AE2-R
2N7002G-AE2-R

2N7002W Mosfet(N-Channel)SOT-3231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V

8.128. 2n7002.pdf Size:224K _lge

2N7002G-AE2-R
2N7002G-AE2-R

2N7002Mosfet (N-Channel)SOT-231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: 7002 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V

8.129. 2n7002kt.pdf Size:626K _wietron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES:SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce

8.130. 2n7002t.pdf Size:287K _wietron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002TN-Channel ENHANCEMENT MODEPOWER MOSFET31. GATE1P b Lead(Pb)-Free22. SOURCE3. DRAIN SOT-523(SC-75)FEATURES:* Fast Switching Speed* Low On-Resistance* Low Voltage DriverAPPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits* Load/Power Switching Cell Phones, PagersMaximu

8.131. 2n7002w.pdf Size:359K _wietron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002WN-Channel MOSFET3 DRAIN3Features:112*Low On-Resistance : 7.5 GATE*Low Input Capacitance: 22PFSOT-323(SC-70)*Low Output Capacitance : 11PF2*Low Threshold Voltage :1 .5V(TYE)SOURCE*Fast Switching Speed : 7nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VConti

8.132. 2n7002dw.pdf Size:212K _wietron

2N7002G-AE2-R
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2N7002DWDual N-Channel MOSFET654123Features:* We declare that the material of product are Halogen Free andSOT-363(SC-88) compliance with RoHS requirements.* ESD Protected:1000V3 2 1D2 G1 S1S2 G2 D14 5 6Maximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VDrain-Gate Voltage RGS

8.133. 2n7002k.pdf Size:335K _wietron

2N7002G-AE2-R
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2N7002KN-Channel Enhancement 3 DRAINMode Power MOSFET31P b Lead(Pb)-Free1GATE *2* Gate Pretection DiodeSOURCE 2SOT-23Features:* Low on-resistance.* Fast switching speed.* Low-voltage drive.* Easily designed drive circuits.* Easy to parallel.* Pb-Free package is available.* Esd Protected:2000VMaximum Ratings(T = 25 Unless Otherwise Specified)A

8.134. 2n7002.pdf Size:298K _wietron

2N7002G-AE2-R
2N7002G-AE2-R

WEITRON2N7002Small Signal MOSFET3 DRAINN-Channel3P b Lead(Pb)-Free121GATESOT-232SOURCEMaximum Ratings (T =25C Unless Otherwise Specified)ARating Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage(RGS = 1.0M) VDGR 60 V115Drain Current IDContinuous TC = 25C (Note 1.) 75IDmA Con tinuous IDM 800TC= 100C (Note 1.) P

8.135. 2n7002kdw.pdf Size:161K _wietron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KDWDual N-Channel MOSFET65P b Lead(Pb)-Free 4123Features:* Low On-ResistanceSOT-363(SC-88)* Fast Switching Speed* Low-voltage drive6 5 4* Easily designed drive circuitsD2 G1 S1* ESD Protected:2000VMechanical Data:*Case: SOT-363, Molded Plastic*Case Material-UL Flammability Rating 94V-0S2 G2 D1*Terminals: Solderable per MIL-STD-202, Method 2081 2

8.136. 2n7002elt1.pdf Size:382K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLAS2N7002ELT1THRUSmall Signal MOSFET 310 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounteNChannel SOT23d ap

8.137. 2n7002t.pdf Size:412K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLASTHRU2N7002TSOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HMOSFET (N-Channel) nted application in order to Low prof

8.138. 2n7002dw1t1.pdf Size:375K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLASTHRU2N7002DW1T1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSmall Signal MOSFET 115 mAmps,60 VoltsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersNChannel SOT-363 better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted app

8.139. 2n7002wt1.pdf Size:368K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLASTHRU2N7002WT1115 mA, 60 VSmall Signal MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNCh

8.140. 2n7002lt1.pdf Size:370K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLASTHRU2N7002LT1Small Signal MOSFET 115 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

8.141. 2n7002nt1.pdf Size:429K _willas

2N7002G-AE2-R
2N7002G-AE2-R

FM120-M WILLASTHRU2N7002NT130 V, 154 mA, Single, N-Channel, GateFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VESD Protection, SC-89SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted appl

8.142. h2n7002k.pdf Size:136K _hsmc

2N7002G-AE2-R
2N7002G-AE2-R

Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................

8.143. h2n7002ksn.pdf Size:156K _hsmc

2N7002G-AE2-R
2N7002G-AE2-R

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

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2N7002G-AE2-R
2N7002G-AE2-R

Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol

8.145. h2n7002.pdf Size:129K _hsmc

2N7002G-AE2-R
2N7002G-AE2-R

Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ................................................................................................................

8.146. ap2n7002ku.pdf Size:100K _ape

2N7002G-AE2-R
2N7002G-AE2-R

AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th

8.147. ap2n7002k-hf.pdf Size:58K _ape

2N7002G-AE2-R
2N7002G-AE2-R

AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

8.148. 2n7002k.pdf Size:814K _shenzhen

2N7002G-AE2-R
2N7002G-AE2-R

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002KN-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol

8.149. pz2n7002m.pdf Size:487K _unikc

2N7002G-AE2-R
2N7002G-AE2-R

PZ2N7002MN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V60V 300mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C300IDContinuous Drain Current mATC = 100 C190IDM1 APulsed Drain C

8.150. 2n7002kg8.pdf Size:459K _silikron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating t

8.151. 2n7002kb.pdf Size:502K _silikron

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KB Main Product Characteristics: VDSS 60V RDS(on) 2(max.) ID 0.3A Marking and pin SOT-23 Schema t ic diag r am Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

8.152. 2n7002 sot-23.pdf Size:201K _can-sheng

2N7002G-AE2-R
2N7002G-AE2-R

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET(N-Channel) FEATURES High density cell design for low RDS(ON) Voltage cotrolled small signal switch Rugged and reliable High saturation current capability MARKING:7002 MAXIMUM RATINGS (TA=25 unless otherwise noted

8.153. br2n7002k2.pdf Size:1033K _blue-rocket-elect

2N7002G-AE2-R
2N7002G-AE2-R

BR2N7002K2 Rev.C Aug.-2018 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KVSensitive gate trigger current and Low Holding current.ESD protected up to 2KV.HF Product. / Applications

8.154. l2n7002flt1g.pdf Size:407K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002FLT1G30 VoltsNChannel SOT233 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. 12FEATURES CASE 318, STYLE 21SOT 23 (TO236AB) RDS(ON) 8@VGS=4V RDS(ON) 13@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exce

8.155. l2n7002dw1t1g.pdf Size:296K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo

8.156. l2n7002swt1g s-l2n7002swt1g.pdf Size:393K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R

8.157. l2n7002lt1g s-l2n7002lt1g.pdf Size:524K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

8.158. l2n7002m3t5g s-l2n7002m3t5g.pdf Size:167K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap

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2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected:1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim

8.160. l2n7002kn3t5g.pdf Size:722K _lrc

2N7002G-AE2-R

8.161. l2n7002slt1g l2n7002slt3g.pdf Size:965K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS

8.162. l2n7002kdw1t1g l2n7002kdw1t3g.pdf Size:597K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D

8.163. l2n7002dmt1g.pdf Size:446K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps, 60 VoltsL2N7002DMT1GNChannel SC74 We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGSRating Symbol Value UnitSC-74DrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc115 mAMPSDrain Current ID 115 mAdc Continuous TC = 25C (Note 1

8.164. l2n7002sdw1t1g l2n7002sdw1t3g.pdf Size:907K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS

8.165. l2n7002lt1g.pdf Size:340K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd

8.166. l2n7002klt1g.pdf Size:778K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn

8.167. l2n7002dw1t1g s-l2n7002dw1t1g.pdf Size:570K _lrc

2N7002G-AE2-R
2N7002G-AE2-R

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE

8.168. 2n7002te.pdf Size:398K _kexin

2N7002G-AE2-R

SMD Type MOSFETN-Channel MOSFET2N7002TESOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 0.29 A3 RDS(ON) 2 (VGS = 20V) 0.30.05+0.10.5 -0.1 RDS(ON) 7.5 (VGS = 5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

8.169. 2n7002t.pdf Size:1085K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel MOSFET2N7002TSOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 115mA3 RDS(ON) 5 (VGS = 10V)0.30.05 RDS(ON) 7 (VGS = 5V)+0.10.5-0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

8.170. 2n7002w.pdf Size:1286K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel MOSFET2N7002W Features VDS (V) = 60V ID = 0.34 A (VGS = 10V) RDS(ON) 1.6 (VGS = 10V) RDS(ON) 2.5 (VGS = 4.5V) ESD Protected1 Gate2 Source3 Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Ta=25 310 Continuous Drain C

8.171. 2n7002k-3.pdf Size:1213K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input Capacitance1 2D rain+0.02+0.10.15 -0.020.95 -0.1Fast Switching Speed+0.11.9-0.2Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtect

8.172. 2n7002dw.pdf Size:1367K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETDual N-Channel MOSFET2N7002DW Features VDS (V) = 60V ID = 115 mA (VGS = 10V) RDS(ON) 7.5 (VGS = 5V) Low Input Capacitance Fast Switching Speed Low On-Resistance1.S2 4.S12.G2 5.G13.D1 6.D2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage @ RGS 1M

8.173. 2n7002e.pdf Size:1201K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features 3Low On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2Low Input Capacitance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol Ra

8.174. 2n7002-3.pdf Size:936K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.21.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings

8.175. 2n7002e-3.pdf Size:1214K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2+0.02Low Input Capacitance +0.10.15 -0.020.95 -0.1+0.11.9 -0.2Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol

8.176. 2n7002k.pdf Size:1191K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23Unit: mm+0.12.9 -0.1Features+0.10.4 -0.13Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input CapacitanceD rain1 2Fast Switching Speed+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtectio

8.177. 2n7002.pdf Size:925K _kexin

2N7002G-AE2-R
2N7002G-AE2-R

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta=2

8.178. 2n7002.pdf Size:321K _ruichips

2N7002G-AE2-R
2N7002G-AE2-R

2N7002N-Channel Advanced Power MOSFETFeatures Pin Description 60V/0.5A, RDS (ON) =4500m(Typ.)@VGS=10VD RDS (ON) =5250m(Typ.)@VGS=4.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Power Management in Desktop Computer or DC/DC ConvertersGSN-C

8.179. 2n7002w.pdf Size:161K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002W60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU RoH

8.180. 2n7002kw.pdf Size:275K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, La

8.181. 2n7002dw.pdf Size:174K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002DW60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU Ro

8.182. 2n7002k.pdf Size:226K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=40.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.056(1.40) Specially Designed for Battery Operated Systems, Solid-State R

8.183. 2n7002.pdf Size:184K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N700260V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.50.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays 0.056(1.40)0.047(1.20) Drivers : Relays, Displays, Lamps, Solenoid

8.184. 2n7002kdw.pdf Size:304K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KDW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, L

8.185. 2n7002ktb.pdf Size:261K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KTB60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.052(1.30)0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays0.

8.186. 2n7002tb.pdf Size:189K _panjit

2N7002G-AE2-R
2N7002G-AE2-R

2N7002TB60V N-CHANNEL ENHANCEMENT MODE MOSFETUnitinch(mm)SOT-523FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@50mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.0.

8.187. am2n7002k.pdf Size:520K _ait_semi

2N7002G-AE2-R
2N7002G-AE2-R

AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

8.188. am2n7002.pdf Size:392K _ait_semi

2N7002G-AE2-R
2N7002G-AE2-R

AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected: 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3

8.189. ama2n7002.pdf Size:546K _ait_semi

2N7002G-AE2-R
2N7002G-AE2-R

AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin

8.190. am2n7002dw.pdf Size:454K _ait_semi

2N7002G-AE2-R
2N7002G-AE2-R

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

8.191. am2n7002w.pdf Size:434K _ait_semi

2N7002G-AE2-R
2N7002G-AE2-R

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0

8.192. cmt2n7002ag.pdf Size:199K _champion

2N7002G-AE2-R
2N7002G-AE2-R

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

8.193. cmt2n7002 cmt2n7002wg.pdf Size:209K _champion

2N7002G-AE2-R
2N7002G-AE2-R

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi

8.194. cmt2n7002k.pdf Size:172K _champion

2N7002G-AE2-R
2N7002G-AE2-R

CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast sw

8.195. 2n7002sgp.pdf Size:378K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)

8.196. 2n7002ssgp.pdf Size:159K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)

8.197. 2n7002egp.pdf Size:451K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002EGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens

8.198. 2n7002dsgp.pdf Size:147K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002DSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-74/SOT-457* Small surface mounting type. (SC-74/SOT-457)* High density cell design for low RDS(ON). * Suitable for high packing density.(1) (6)*

8.199. 2n7002tgp.pdf Size:124K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

8.200. 2n7002vgp.pdf Size:166K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002VGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESOT-563* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON)* Suitable for high packing density.(1)(S1) (D1)(6)* Rug

8.201. 2n7002esegp.pdf Size:569K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002ESEGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and

8.202. 2n7002tesgp.pdf Size:295K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002TESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing density.0.10.20.

8.203. 2n7002sesgp.pdf Size:348K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d

8.204. 2n7002esgp.pdf Size:152K _chenmko

2N7002G-AE2-R
2N7002G-AE2-R

CHENMKO ENTERPRISE CO.,LTD2N7002ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and reliable.(1)

8.205. 2n7002-g.pdf Size:106K _comchip

2N7002G-AE2-R
2N7002G-AE2-R

MOSFET2N7002-G (N-Channel)RoHS DeviceFeaturesSOT-23 Power dissipation : 0.35W0.119(3.00)0.110(2.80)DEquivalent Circuit0.056(1.40)0.047(1.20)DG S0.083(2.10)G : Gate 0.066(1.70)0.006(0.15)S : Source 0.002(0.05)GD : Drain0.044(1.10)0.103(2.60)0.035(0.90)0.086(2.20)S0.006(0.15)max0.020(0.50)Maximum Ratings (at TA=25C)0.013(0.35)Symbol 0.00

8.206. ctm2n7002.pdf Size:151K _crownpo

2N7002G-AE2-R
2N7002G-AE2-R

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance

8.207. 2n7002h 2n7002hw 2n7002ht 2n7002hl.pdf Size:570K _galaxy

2N7002G-AE2-R
2N7002G-AE2-R

N-Ch Enhancem osFET Trahannel E ment Mo ansistor 2NN7002H Feature es Low on-resistancce. Pb ESD Protected G 2KV HBM Lead-freeGate Up to 2 High- ching. -speed switc2N7002H 2N7002HHW Drive n be simple. e circuits can SOT-23 SOT-323 T 2 Parallel use is eaasy. Typica ations al Applica N-channel enhan ode effect trancement mo ansistor. Switc ation

8.208. 2n7002k.pdf Size:284K _galaxy

2N7002G-AE2-R
2N7002G-AE2-R

Product specification 4V Drive Nch MOS FET 2N7002K FEATURES Low on-resistance. Pb High ESD. Lead-free High-speed switching. Low-voltage drive(4V). Drive circuits can be simple. Parallel use is easy. APPLICATIONS N-channel enhancement mode effect transistor. SOT-23 Switching application. ORDERING INFORMATION Type No. Marking Packag

8.209. 2n7002k.pdf Size:593K _goodark

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K 60V N-Channel MOSFET FEATURES VDS=60V, ID=0.3ARDS(ON)

8.210. k2n7002k.pdf Size:771K _kodenshi

2N7002G-AE2-R
2N7002G-AE2-R

K2N7002K N-Channel Enhancement Mode MOSFET 2018.04.18 2018.04.18 2018.04.18 2018.04.18 1 000 2017.10.18 2 001 2018.04.18 3 1 of 7 AUK Dalian K2N7002K N-Channel Enh

8.211. me2n7002d.pdf Size:1630K _matsuki_electric

2N7002G-AE2-R
2N7002G-AE2-R

ME2N7002D N-Channel MOSFET ESD ProtectedGENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min

8.212. me2n7002e.pdf Size:605K _matsuki_electric

2N7002G-AE2-R
2N7002G-AE2-R

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

8.213. 2n7002k.pdf Size:226K _ncepower

2N7002G-AE2-R
2N7002G-AE2-R

Pb Free Producthttp://www.ncepower.com 2N7002KNCE N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON)

8.214. 2n7002e.pdf Size:1274K _slkor

2N7002G-AE2-R
2N7002G-AE2-R

2N7002EN-Channel Power MOSFET General Features VDS = 60V,ID = 300mA RDS(ON)

8.215. 2n7002.pdf Size:536K _slkor

2N7002G-AE2-R
2N7002G-AE2-R

2N7002N-Channel Power MOSFET DGeneral Features VDS = 60V,ID =0.115A GRDS(ON)

8.216. 2n7002wsk.pdf Size:305K _tiptek

2N7002G-AE2-R
2N7002G-AE2-R

2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDAS , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: 2N7002WSK H

8.217. s2n7002dm.pdf Size:311K _tiptek

2N7002G-AE2-R
2N7002G-AE2-R

S2N7002DM SMALL SIGNAL MOSFET 115mA 60V N-CHANNEL FEATURES FAST SWITCHING SPEED. EASILY DESIGNED DRIVE CIRCUITS. LOW ON-RESISTANCE ESD PROTECTED:1000V MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: S2N7002DM Halogen Free: S2N7002DM-H CASESOT-23-6L DIMENSIONS IN MILLIMETERS AND (INCHES) ABSOLUTE MAXIMUM RATINGS RATINGS AT 25C AMBIEN

8.218. qm2n7002e3k1.pdf Size:307K _ubiq

2N7002G-AE2-R
2N7002G-AE2-R

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mAcharge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

8.219. 2n7002b.pdf Size:1211K _umw-ic

2N7002G-AE2-R
2N7002G-AE2-R

RUMWUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002B-SOT 23 Plastic-Encapsulate MOSFETS2N7002B MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5@10V60V115mA 7@5V1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage co

8.220. 2n7002ta 2n7002tc.pdf Size:145K _zetex

2N7002G-AE2-R
2N7002G-AE2-R

2N700260V SOT23 N-channel enhancement mode MOSFET SummaryV(BR)DSS RDS(on) ( )ID (A)7.5 @ VGS= 10V 0.5607.5 @ VGS= 5V 0.05DescriptionA small signal MOSFET for general purpose switching applications.FeaturesD Fast switching speed Low gate drive capability SOT23 packageGApplicationsS General switching applicationsOrdering informationSDevice Reel

8.221. ap2n7002.pdf Size:1560K _allpower

2N7002G-AE2-R
2N7002G-AE2-R

8.222. 2n7002t.pdf Size:1628K _anbon

2N7002G-AE2-R
2N7002G-AE2-R

2N7002TN-Channel MOSFETSOT-523 Plastic-Encapsulate MOSFETSID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE High density cell design for low RDS(ON) Voltage controlled

8.223. 2n7002ed.pdf Size:723K _anbon

2N7002G-AE2-R
2N7002G-AE2-R

8.224. 2n7002et.pdf Size:622K _anbon

2N7002G-AE2-R
2N7002G-AE2-R

2N7002ET N-Channel SMD MOSFET ESD ProtectionProduct Summary V R I (BR)DSS DS(on)MAX D3@10V 60V 0.115A 4@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable Battery Switch High saturation current capability

8.225. 2n7002e.pdf Size:1028K _anbon

2N7002G-AE2-R
2N7002G-AE2-R

2N7002EN-Channel SMD MOSFET ESD Protection 60V N-Channel Enhancement Mode MOSFET- ESD ProtectionFeaturesPackage outline RDS(ON), VGS@10V, ID@500mA=3.0 RDS(ON), VGS@4.5V, ID@200mA=4.0 SOT-23 ESD protection 2V (Human body mode) Advanced trench process technology. High density cell design for ultra low on-resistance. Very low leakage current in off c

8.226. 2n7002ew.pdf Size:1157K _anbon

2N7002G-AE2-R
2N7002G-AE2-R

2N7002EW N-Channel MOSFET(ESD)SOT-323 Plastic-Encapsulate MOSFETSFEATURE High density cell design for Low RDS(on)SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION

8.227. 2n7002.pdf Size:1850K _born

2N7002G-AE2-R
2N7002G-AE2-R

2N7002MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. MAXIMUM RANTINGSParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGat

8.228. 2n7002kd.pdf Size:907K _fuxinsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KDN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 5.0@10V 60V 0.34A 5.3@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable High saturation current capability ESD protected Package Circuit diagram

8.229. 2n7002k.pdf Size:2536K _fuxinsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 2.8@10V 60V 0.34A 3.6@4.5V Feature Application ESD protection Specially designed for battery operated system, Advanced trench process technology solid-state relays drivers,relays,displays,lamps, High density cell design for ultra low on-resistance solenoids,memories,etc. Very low leaka

8.230. et2n7002k.pdf Size:856K _eternal

2N7002G-AE2-R
2N7002G-AE2-R

Eternal Semiconductor Inc. ET2N7002KN-Channel High Density Trench MOSFET (60V,0.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ2.5 @ VGS = 10V, ID=0.5A60V 500mA3.0 @ VGS = 5V, ID=0.05AFeatures High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV LeadPb-free and halogen-freeDrainET2N7002K Pin Assignment & Symbo

8.231. 2n7002e.pdf Size:681K _fms

2N7002G-AE2-R
2N7002G-AE2-R

2N7002E N-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 2.5@10V 60V 0.34A 3.0@4.5V Feature Application ESD protection 2.0KV(Human body mode) Specially designed for battery operated system, Advanced trench process technology solid-state relays drivers,relays,displays,lamps, High density cell design for ultra low on-resistance solenoids,memori

8.232. 2n7002k.pdf Size:749K _guangdong_hottech

2N7002G-AE2-R
2N7002G-AE2-R

Plastic-Encapsulate DiodesFEATURE 2N7002K High density cell design for low RDS(ON) N-Channel MOSFET Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD Protected Up To 2k VMAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit1.GateDrain-Source Voltage VDS 60 V 2.SourceSOT-233.DrainGate-Sou

8.233. 2n7002.pdf Size:1506K _guangdong_hottech

2N7002G-AE2-R
2N7002G-AE2-R

Plastic-Encapsulate Mosfets2N7002FEATURE N-Channel MOSFET High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit1.GateDrain-Source Voltage VDS 60 V 2.SourceSOT-233.DrainGate-Source Voltage VGS 20 V Cont

8.234. hss2n7002k.pdf Size:1899K _huashuo

2N7002G-AE2-R
2N7002G-AE2-R

HSS2N7002K N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V We declare that the material of product compliance with Rohs requirements and RDS(ON),max 2 Halogen Free. ESD protected ID 0.3 A Low RDS(on) SOT23 Pin Configuration l Low side load switch l Level shift circutis l DC-DC converter l Portable applications i.e. DSC, PDA, Cell Phone,

8.235. 2n7002k.pdf Size:2735K _high_diode

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KSOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 235@10VD60VmA340@4.5V5.3SFeatures High density cell design for Low RDS onGVoltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Applications Load

8.236. 2n7002.pdf Size:2402K _high_diode

2N7002G-AE2-R
2N7002G-AE2-R

2N7002HD-ST0.36*0.36SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 235@10VD60V115mA7@5VSFeatures MOSFET (N-Channel) GHigh density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Applications

8.237. 2n7002kt.pdf Size:1171K _leiditech

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2Applications (Top View) Load Switch for Portable Devices DC/DC Converter Marking: KN Maximum Ratings (T =25C unless otherwise spe

8.238. 2n7002.pdf Size:1543K _leiditech

2N7002G-AE2-R
2N7002G-AE2-R

2N7002 N-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 5@10V60V115mA 7@5V1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable High saturation current capability Equivale

8.239. 2n7002k.pdf Size:1318K _jestek

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K60V,0.34AN-Channel MosfetSOT-23FEATURESRDS(ON) 2.3 @VGS=10V RDS(ON)2.7 @VGS=4.5VAPPLICATIONSPortable appliancesMARKING N-CHANNEL MOSFET7002:Device CodeMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 60VGate-Source Voltage VGS 20I 0.34D*Continuous Drain Current*Pulsed Drain Current*

8.240. 2n7002k.pdf Size:1632K _mdd

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KSOT-23 Plastic-Encapsulate MOSFETS60V N-Channel Enhancement Mode MOSFETV(BR)DSS RDS(on)Typ ID MAX SO T -23 30.9@10V60VmA500@4.5V1.1 1. GATE 2. SOURCE 123. DRAINFEATURE APPLICATION Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable

8.241. 2n7002.pdf Size:1897K _mdd

2N7002G-AE2-R
2N7002G-AE2-R

2N7002SOT-23 Plastic-Encapsulate MOSFETS60V N-Channel Enhancement Mode MOSFETV(BR)DSS RDS(on)MAX ID SO T -23 31.1@10V60VmA500@4.5V1.3 1. GATE 2. SOURCE 123. DRAINFEATURE APPLICATION Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable Hig

8.242. 2n7002kw.pdf Size:319K _powersilicon

2N7002G-AE2-R
2N7002G-AE2-R

DATA SHEET 2N7002KW N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 300 mA FEATURES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND DRIVE APPLICATION. ESD MIL-STD883 ,1KV CONTACT DISCHARGE COMPLIANT PROTECTION. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA HIGDENSITY CELL DESIGN FOR LOW RDS

8.243. 2n7002k.pdf Size:1928K _cn_puolop

2N7002G-AE2-R
2N7002G-AE2-R

2N7002KN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, RDS(ON) = 4(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 4(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. ESD protected up to 2K V1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Comp

8.244. 2n7002.pdf Size:1161K _cn_puolop

2N7002G-AE2-R
2N7002G-AE2-R

2N7002N-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Converters

8.245. 2n7002.pdf Size:345K _cn_shikues

2N7002G-AE2-R
2N7002G-AE2-R

N-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Features Surface-mounted package 3 Extremely low threshold voltage Advanced trench cell design ESD protected ( HBM > 2KV ) Applications Portable appliances 2 Quick reference 11 BV 60 V Ptot 0.83 W ID 0.43 A BV60 V Ptot 0.83 W ID 0.43 A RDS(ON) 3 @ VGS =

8.246. 2n7002t.pdf Size:203K _cn_tak_cheong

2N7002G-AE2-R
2N7002G-AE2-R

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 60 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 115 mA SOT-523 PD Power Dissipation 1

8.247. 2n7002k.pdf Size:499K _wpmtek

2N7002G-AE2-R
2N7002G-AE2-R

2N7002K 60V/0.3A N Channel Advanced Power MOSFET Features Low RDS(on) @VGS=10V V R Typ I Max (BR)DSS DS(ON) D 5V Logic Level Control2.2 @ 10V N Channel SOT23 Package60V 0.3A HMB ESD Protection 2KV2.8 @ 4.5V Pb-Free, RoHS CompliantApplications Logic level translators High-speed line drivers Low-side load switch Switching circu

8.248. 2n7002ak.pdf Size:860K _cn_yfw

2N7002G-AE2-R
2N7002G-AE2-R

A2N7002 K SOT-23 N-Channel Enhancement MOSFET3 High Speed Switching ApplicationsESD protected gate2 1.GATELow ON-resistance2.SOURCERDS(on) = 2.8 (typ.) (@VGS = 10 V) 3.DRAIN1RDS(on) = 3.1 (typ.) (@VGS = 5 V) Simplified outline(SOT-23)RDS(on) = 3.2 (typ.) (@VGS = 4.5 V)3 Marking Code:NJ 1 2Equivalent Circuit (top view)Absolute Maximum Ratings

8.249. 2n7002kw.pdf Size:302K _cn_yfw

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2N7002G-AE2-R

2N7002KW SOT-323 N-Channel Enhancement MOSFET3FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage21.GateLow Input Capacitance2.SourceFast Switching Speed 3.Drain1Low Input/Output Leakage Simplified outline(SOT-323) ESD Protected 2KV HBMDrainGate GateProtectionSourceDiodeAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002K MOSFET(N-Channel) SOT-23 V(BR)DSS RDS(ON)MAX ID SOT-23 Plastic-Encapsulate MOSFET 5@10V 60V 340mA 5.3@4.5V Features SOT-23 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ESD protected Load Switch for Portable

8.251. 2n7002.pdf Size:2663K _cn_twgmc

2N7002G-AE2-R
2N7002G-AE2-R

MMBT55512N7002AO3400SI23052N7002N-Channel Enhancement Mode Field Effect TransistorDescription These N-channel enhancement mode field effect transis-tors SOT-23are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performan

8.252. wst2n7002k.pdf Size:876K _winsok

2N7002G-AE2-R
2N7002G-AE2-R

WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with

8.253. wst2n7002.pdf Size:1382K _winsok

2N7002G-AE2-R
2N7002G-AE2-R

WST2N7002 N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mAof the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

8.254. wst2n7002a.pdf Size:1407K _winsok

2N7002G-AE2-R
2N7002G-AE2-R

WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

8.255. se2n7002.pdf Size:280K _cn_sino-ic

2N7002G-AE2-R
2N7002G-AE2-R

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

8.256. se2n7002k.pdf Size:281K _cn_sino-ic

2N7002G-AE2-R
2N7002G-AE2-R

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002K 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

8.257. vs2n7002k.pdf Size:649K _cn_vanguard

2N7002G-AE2-R
2N7002G-AE2-R

VS2N7002K 60V/760mA N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),typ@VGS=10V 1 N-Channel R DS(on),typ@VGS=4.5V 1.1 Enhancement Mode I D 0.76 A Fast Switching ESD Protected by HBM up to 2.5KV SOT23 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS2N7002K SOT23 72K 3000pcs/reel

8.258. 2n7002t.pdf Size:841K _cn_vbsemi

2N7002G-AE2-R
2N7002G-AE2-R

2N7002Twww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002BKwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002KBwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

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2N7002G-AE2-R
2N7002G-AE2-R

2N7002Ewww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

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2N7002G-AE2-R
2N7002G-AE2-R

Marking RK * Or RK* =wafer tracking no

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2N7002G-AE2-R

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V2.5

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V2.5

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RoHS COMPLIANT 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

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2N7002G-AE2-R
2N7002G-AE2-R

RoHS COMPLIANT 2N7002K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance F

8.269. 2n7002.pdf Size:664K _cn_yangzhou_yangjie_elec

2N7002G-AE2-R
2N7002G-AE2-R

RoHS COMPLIANT 2N7002 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / O

8.270. 2n7002kdw.pdf Size:837K _cn_yangzhou_yangjie_elec

2N7002G-AE2-R
2N7002G-AE2-R

RoHS COMPLIANT 2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance

8.271. ttx2n7002ka.pdf Size:629K _cn_wuxi_unigroup

2N7002G-AE2-R
2N7002G-AE2-R

TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) 2 ID (at VGS =10V) 0.35A Low Gate Charge RDS(ON) (at VGS =10V)

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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