FDD86326 Todos los transistores

 

FDD86326 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86326
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD86326 datasheet

 ..1. Size:216K  fairchild semi
fdd86326.pdf pdf_icon

FDD86326

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m Features Max rDS(on) = 23 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductor s advanced Power Trench process that has been optimized for

 ..2. Size:569K  onsemi
fdd86326.pdf pdf_icon

FDD86326

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:352K  fairchild semi
fdd86367 f085.pdf pdf_icon

FDD86326

May 2015 FDD86367_F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

 8.2. Size:456K  fairchild semi
fdd86369 f085.pdf pdf_icon

FDD86326

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

Otros transistores... FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , FDD86102LZ , STT01L10 , FDD86250 , AON7410 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 .

 

 

 


 
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