FDD8647L Todos los transistores

 

FDD8647L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8647L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 42 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 20 nC

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD8647L Datasheet (PDF)

1.1. fdd8647l.pdf Size:311K _fairchild_semi

FDD8647L
FDD8647L

December 2008 FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 m? Features General Description This N-Channel MOSFET has been produced using Fairchild Max rDS(on) = 9 m? at VGS = 10 V, ID = 13 A Semiconductors proprietary PowerTrench technology to Max rDS(on) = 13 m? at VGS = 4.5 V, ID = 11 A deliver low rDS(on) and optimized BVDSS capability to offer superior performance ben

5.1. fdd86367 f085.pdf Size:352K _upd-mosfet

FDD8647L
FDD8647L

May 2015 FDD86367_F085 N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ Features Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

5.2. fdd86369 f085.pdf Size:456K _upd-mosfet

FDD8647L
FDD8647L

May 2015 FDD86369_F085 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 5.3. fdd86250.pdf Size:374K _fairchild_semi

FDD8647L
FDD8647L

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m? at VGS = 10 V, ID = 8 A Semiconductors advanced Power Trench process that has Max rDS(on) = 31 m? at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain superior s

5.4. fdd86326.pdf Size:216K _fairchild_semi

FDD8647L
FDD8647L

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m? Features Max rDS(on) = 23 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m? at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for rDS(on), swit

 5.5. fdd86252.pdf Size:343K _fairchild_semi

FDD8647L
FDD8647L

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

5.6. fdd86540.pdf Size:241K _fairchild_semi

FDD8647L
FDD8647L

February 2012 FDD86540 N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

5.7. fdd86102.pdf Size:403K _fairchild_semi

FDD8647L
FDD8647L

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m? Features Max rDS(on) = 24 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m? at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), swi

5.8. fdd86102lz.pdf Size:365K _fairchild_semi

FDD8647L
FDD8647L

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m? at VGS = 10 V, ID = 8 A Semiconductors advanced PowerTrench process that has Max rDS(on) = 31 m? at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching loss. G-S

5.9. fdd86110.pdf Size:330K _fairchild_semi

FDD8647L
FDD8647L

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

5.10. fdd86113lz.pdf Size:239K _fairchild_semi

FDD8647L
FDD8647L

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

5.11. fdd86250.pdf Size:262K _inchange_semiconductor

FDD8647L
FDD8647L

Isc N-Channel MOSFET Transistor FDD86250 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

5.12. fdd86102lz.pdf Size:269K _inchange_semiconductor

FDD8647L
FDD8647L

isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta

Otros transistores... FDD850N10L , STT02N07 , FDD86102 , STT01N20 , FDD86102LZ , STT01L10 , FDD86250 , FDD86326 , IRF1405 , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870_F085 .

 

 
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