30N06L-TM3-T Todos los transistores

 ..1. Size:331K  utc
 30n06l-tm3-t 30n06g-tm3-t 30n06l-tn3-t 30n06g-tn3-t 30n06l-tn3-r 30n06g-tn3-r 30n06g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2 TO-220F1 characteristics. This power MOSFET is usually used

 6.1. Size:331K  utc
 30n06l-ta3-t 30n06g-ta3-t 30n06l-tf1-t 30n06g-tf1-t 30n06l-tf2-t 30n06g-tf2-t 30n06l-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2 TO-220F1 characteristics. This power MOSFET is usually used

 8.1. Size:1628K  fairchild semi
 fqb30n06l fqi30n06l.pdf

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 8.2. Size:623K  fairchild semi
 fqp30n06l.pdf

May 2001 TM QFET FQP30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailo

 8.3. Size:188K  fairchild semi
 rfp30n06le rf1s30n06lesm.pdf

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

 8.4. Size:653K  fairchild semi
 fqpf30n06l.pdf

May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 22.5A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially ta

 8.5. Size:734K  fairchild semi
 fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 8.6. Size:1034K  fairchild semi
 fqb30n06ltm.pdf

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 8.7. Size:734K  fairchild semi
 fqd30n06l fqu30n06l.pdf

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 8.8. Size:1005K  infineon
 ipd230n06lg.pdf

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> mW D n) m x P ( 381>>581>35=5>C

 8.9. Size:679K  infineon
 ipp230n06l3 ipb230n06l3.pdf

pe IPB230N06L3 G IPP230N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D R "2

 8.10. Size:75K  onsemi
 ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf

 8.11. Size:1221K  onsemi
 fqb30n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.12. Size:64K  harris semi
 rf1s30n06le.pdf

RFP30N06LE, RF1S30N06LE, S E M I C O N D U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB 30A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

 8.13. Size:634K  way-on
 wmk030n06lg4.pdf

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18

 8.14. Size:630K  way-on
 wmo030n06lg4.pdf

WMO030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 60V, I = 130A

 8.15. Size:770K  cn vbsemi
 30n06l.pdf

30N06L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 8.16. Size:1135K  cn vbsemi
 fqp30n06l.pdf

FQP30N06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 8.17. Size:1144K  cn vbsemi
 rfp30n06le.pdf

RFP30N06LE www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

 8.18. Size:962K  cn minos
 mdt30n06l.pdf

60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON)