2SK2510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2510
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 380 nS
Cossⓘ - Capacitancia de salida: 780 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de 2SK2510 MOSFET
2SK2510 Datasheet (PDF)
2sk2510.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2510 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Super Low On-Resistance2.70.2RDS (on)1 = 20 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 30 m
2sk2515.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2515SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2515 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A)RDS (on)2 = 14 m
2sk2511.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2511 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 40 m
2sk2512.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2512 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A)RDS (on)2 = 23 m (V
Otros transistores... 2SK2484 , 2SK2485 , 2SK2486 , 2SK2487 , 2SK2488 , 2SK2494-01 , 2SK2498 , 2SK2499 , AO3407 , 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 .
History: CEF05N8 | EMB03N03HR | HM2302F | STS19N3LLH6 | FDMS86369-F085
History: CEF05N8 | EMB03N03HR | HM2302F | STS19N3LLH6 | FDMS86369-F085



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