40N15L-TF1-T Todos los transistores

 

40N15L-TF1-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 40N15L-TF1-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 320 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 40N15L-TF1-T

 

40N15L-TF1-T Datasheet (PDF)

 ..1. Size:169K  utc
40n15l-ta3-t 40n15g-ta3-t 40n15l-tf1-t 40n15g-tf1-t 40n15l-tf2-t 40n15g-tf2-t.pdf

40N15L-TF1-T
40N15L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 40N15 Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 40N15 is a N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. FEATURES * RDS(ON)

 8.1. Size:4219K  first semi
fir40n15lg.pdf

40N15L-TF1-T
40N15L-TF1-T

FIR40N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.1. Size:271K  samsung
ssh40n15 ssh40n20.pdf

40N15L-TF1-T
40N15L-TF1-T

 9.2. Size:415K  samsung
sgl40n150d.pdf

40N15L-TF1-T
40N15L-TF1-T

N- CHANNEL IGBTSGL40N150DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. at Ic=40A1* High Input Impedance* Built in Fast Recovery Diode :VF=1.7 at IF=10A, trr=170nSCAPPLICATIONSG* Home Appliance - Induction Heater - IH JAR E - Micro Wave OvenABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollect

 9.3. Size:171K  samsung
sgl40n150.pdf

40N15L-TF1-T
40N15L-TF1-T

N- CHANNEL IGBTSGL40N150FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. (at Ic=40A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V1500VGEGate - Emitter Voltage V 25

 9.4. Size:742K  vishay
sqm40n15-38.pdf

40N15L-TF1-T
40N15L-TF1-T

SQM40N15-38www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 150DefinitionRDS(on) () at VGS = 10 V 0.038 TrenchFET Power MOSFETRDS(on) () at VGS = 6 V 0.040 Package with Low Thermal ResistanceID (A) 40 AEC-Q101 QualifieddConfiguration Single 1

 9.5. Size:163K  vishay
sum40n15-38.pdf

40N15L-TF1-T
40N15L-TF1-T

SUM40N15-38Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.038 at VGS = 10 V40150 New Low Thermal Resistance Package0.042 at VGS = 6 V38 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO

 9.6. Size:337K  ixys
ixtt240n15x4hv ixth240n15x4.pdf

40N15L-TF1-T
40N15L-TF1-T

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

 9.7. Size:658K  way-on
wmll040n15hg2.pdf

40N15L-TF1-T
40N15L-TF1-T

WMLL040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL040N15HG2 uses Wayon's 2nd generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

 9.8. Size:679K  way-on
wmm040n15hg2.pdf

40N15L-TF1-T
40N15L-TF1-T

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

 9.9. Size:904K  cn hunteck
hgn240n15s.pdf

40N15L-TF1-T
40N15L-TF1-T

P-1HGN240N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching21RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitD

 9.10. Size:608K  cn hmsemi
hm40n15ka.pdf

40N15L-TF1-T
40N15L-TF1-T

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.11. Size:511K  cn hmsemi
hm40n15k.pdf

40N15L-TF1-T
40N15L-TF1-T

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.12. Size:220K  inchange semiconductor
40n15.pdf

40N15L-TF1-T
40N15L-TF1-T

isc N-Channel MOSFET Transistor 40N15FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.08(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies,converters,AC and DC motor controlsABSOLUTE

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


40N15L-TF1-T
  40N15L-TF1-T
  40N15L-TF1-T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top