4N60L-TA3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 4N60L-TA3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220

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4N60L-TA3-T Datasheet (PDF)

..1. Size:441K utc
4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

7.1. Size:441K utc
4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdf

9.1. Size:168K apt
apt94n60l2c3.pdf

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, QgG Avalanche Energy Rated TO-264 Max PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT94N60L2C3 UNITVDSS Drain-Source Voltage60

9.2. Size:250K microsemi
apt94n60l2c3g.pdf

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, QgD Avalanche Energy Rated TO-264 Max PackageGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. It

9.3. Size:651K aosemi
aot4n60 aotf4n60 aotf4n60l.pdf

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.4. Size:992K bruckewell
msf4n60l.pdf

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

9.5. Size:2769K first semi
fir4n60lg.pdf

FIR4N60LGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR4N60LG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The1improved planar stripe cell and the improved guard ring 3terminal have been especially tailored to minimize on-state resistance, provi

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