4N60G-T2Q-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N60G-T2Q-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 106 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 80 nC
Tiempo de subida (tr): 80 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO262
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4N60G-T2Q-T Datasheet (PDF)
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