4N65KL-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N65KL-TN3-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 14 nC
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET 4N65KL-TN3-R
4N65KL-TN3-R Datasheet (PDF)
4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-tnd-r 4n65kg-tnd-r 4n65kl-t2q-t 4n65kg-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kg-tm3-t 4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
4n65kl-t2q-t 4n65kg-t2q-t 4n65kl-t60-k 4n65kg-t60-k 4n65kl-tnd-r 4n65kg-tnd-r 4n65kg-tf3t-t 4n65kl-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kg-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
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