4N65KG-TND-R Todos los transistores

 

4N65KG-TND-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4N65KG-TND-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

4N65KG-TND-R Datasheet (PDF)

 ..1. Size:391K  utc
 4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-tnd-r 4n65kg-tnd-r 4n65kl-t2q-t 4n65kg-t2q-t.pdf pdf_icon

4N65KG-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

 ..2. Size:243K  utc
 4n65kl-t2q-t 4n65kg-t2q-t 4n65kl-t60-k 4n65kg-t60-k 4n65kl-tnd-r 4n65kg-tnd-r 4n65kg-tf3t-t 4n65kl-tm3-t.pdf pdf_icon

4N65KG-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

 5.1. Size:302K  utc
 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kg-tf3-t.pdf pdf_icon

4N65KG-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

 5.2. Size:318K  utc
 4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf pdf_icon

4N65KG-TND-R

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H

 

 
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