2SK2511 Todos los transistores

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2515 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Super Low On-Resistance 4 RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 m

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2512 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 m (V

N-channel MOS-FET 2SK2519-01 FAP-II Series 200V 0,4 10A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2510 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Super Low On-Resistance 2.7 0.2 RDS (on)1 = 20 m (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 m

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2514 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Super Low On-Resistance 4 RDS (on)1 15 m (VGS = 10 V, ID = 25 A) RDS (on)2 23

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran- (in millimeters) sistor designed for high current switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 10.0 Low On-Resistance RDS(on)1 = 15 m (VGS = 10 V,

N-channel MOS-FET 2SK2518-01MR FAP-IIA Series 200V 0,13 20A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Eq