4N65L-TF3T-T Todos los transistores

 

4N65L-TF3T-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 4N65L-TF3T-T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de 4N65L-TF3T-T MOSFET

- Selecciónⓘ de transistores por parámetros

 

4N65L-TF3T-T datasheet

 ..1. Size:368K  utc
4n65l-ta3-t 4n65g-ta3-t 4n65l-tf1-t 4n65g-tf1-t 4n65l-tf2-t 4n65g-tf2-t 4n65l-tf3-t 4n65g-tf3-t 4n65l-tf3t-t 4n65g-tf3t-t.pdf pdf_icon

4N65L-TF3T-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.1. Size:368K  utc
4n65l-t2q-t 4n65g-t2q-t 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-e-k08-5060-r 4n65l-tm3-t 4n65g-tm3-t.pdf pdf_icon

4N65L-TF3T-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.2. Size:368K  utc
4n65l-tms-t 4n65g-tms-t 4n65l-tms2-t 4n65g-tms2-t 4n65l-tms4-t 4n65g-tms4-t 4n65l-tn3-r 4n65g-tn3-r 4n65l-tnd-r 4n65g-tnd-r.pdf pdf_icon

4N65L-TF3T-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.3. Size:368K  utc
4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-k08-5060-r 4n65g-k08-5060-r 4n65l-t2q-t 4n65g-t2q-t 4n65l-tm3-t 4n65g-tm3-t.pdf pdf_icon

4N65L-TF3T-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

Otros transistores... 4N65L-TA3-T , 4N65G-TA3-T , 4N65L-TF1-T , 4N65G-TF1-T , 4N65L-TF2-T , 4N65G-TF2-T , 4N65L-TF3-T , 4N65G-TF3-T , IRFZ44 , 4N65G-TF3T-T , 4N65L-TMS-T , 4N65G-TMS-T , 4N65L-TMS2-T , 4N65G-TMS2-T , 4N65L-TMS4-T , 4N65G-TMS4-T , 4N65L-TN3-R .

History: SWD6N80DE | SWD2N60DC

 

 

 

 

↑ Back to Top
.