4N70KL-TN3-R Todos los transistores

 ..1. Size:329K  utc
 4n70kl-tm3-t 4n70kg-tm3-t 4n70kl-tms-t 4n70kg-tms-t 4n70kl-tms2-t 4n70kg-tms2-t 4n70kl-tms4-t 4n70kg-tms4-t 4n70kl-tn3-r 4n70kg-tn3-r 4n70kl-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor

 6.1. Size:329K  utc
 4n70kl-ta3-t 4n70kg-ta3-t 4n70kl-tf3-t 4n70kg-tf3-t 4n70kl-tf1-t 4n70kg-tf1-t 4n70kl-tf2-t 4n70kg-tf2-t 4n70kl-tf3-t 4n70kg-tf3-t 4n70kg-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor

 9.1. Size:245K  utc
 4n70k.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor contr

 9.2. Size:556K  samwin
 sw4n70k.pdf

SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS 700V ID 4A High ruggedness RDS(ON) (Max1.3 )@VGS=10V RDS(ON) 1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced

 9.3. Size:907K  samwin
 swf4n70k2 swn4n70k2 swd4n70k2.pdf

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.15 )@VGS=10V RDS(ON) 1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

 9.4. Size:738K  samwin
 swf4n70k swi4n70k swd4n70k.pdf

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 700V High ruggedness ID 4A Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

 9.5. Size:1172K  cn hmsemi
 hms4n70k hms4n70i.pdf

HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industry s ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.